发明授权
- 专利标题: Semiconductor device including uniform contact plugs and a method of manufacturing the same
- 专利标题(中): 包括均匀接触塞的半导体器件及其制造方法
-
申请号: US12697620申请日: 2010-02-01
-
公开(公告)号: US08203135B2公开(公告)日: 2012-06-19
- 发明人: Kyu-Rie Sim , Jung-Hoon Park , Yoon-Jong Song , Jae-Min Shin , Shin-Hee Han
- 申请人: Kyu-Rie Sim , Jung-Hoon Park , Yoon-Jong Song , Jae-Min Shin , Shin-Hee Han
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2009-0009731 20090206
- 主分类号: H01L29/41
- IPC分类号: H01L29/41
摘要:
A semiconductor device, a semiconductor module, an electronic apparatus and methods of fabricating and manufacturing the same are provided. The semiconductor device includes a lower interconnection formed on a substrate, a plurality of control patterns formed on the lower interconnection, a plurality of lower contact plug patterns formed on the control patterns, a plurality of storage patterns formed on the lower contact plug patterns, a plurality of upper electrodes formed on the storage patterns, and a plurality of upper interconnections formed on the upper electrodes. The lower contact plug patterns each include at least two contact holes having different sizes, a plurality of sidewall patterns formed on inner sidewalls of the two contact holes and wherein the sidewall patterns have different thicknesses from one another. The semiconductor device further includes a plurality of electrode patterns conformably formed on the inside of the sidewall patterns and having size errors less than 10%, and a plurality of filling patterns formed inside the electrode patterns and completely filling the inside of the contact holes.