发明授权
- 专利标题： Method of manufacturing semiconductor device and semiconductor device
- 专利标题（中）： 制造半导体器件和半导体器件的方法
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申请号： US12826100申请日： 2010-06-29
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公开(公告)号： US08213209B2公开(公告)日： 2012-07-03
- 发明人: Hiroshi Tsuda , Yoshitaka Kubota , Hiromichi Takaoka
- 申请人： Hiroshi Tsuda , Yoshitaka Kubota , Hiromichi Takaoka
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2009-172246 20090723
- 主分类号： G11C5/00
- IPC分类号： G11C5/00 ; G11C17/18 ; G11C8/00 ; H01L23/52 ; H01L21/336
摘要：
In a method of manufacturing a semiconductor device, element properties of an element property extraction pattern formed on a semiconductor wafer is extracted as element properties of a current control element corresponding to the element property extraction pattern. A supply energy to the current control element is set which is formed between nodes on the semiconductor wafer, based on the extracted element properties. The set supply energy is supplied to the current control element to irreversible control an electrical connection between the nodes through the device breakdown by the current control element.
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