发明授权
- 专利标题： Nitride semiconductor heterostructures and related methods
- 专利标题（中）： 氮化物半导体异质结构及相关方法
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申请号： US12617150申请日： 2009-11-12
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公开(公告)号： US08222650B2公开(公告)日： 2012-07-17
- 发明人: Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
- 申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
- 申请人地址： US NY Green Island
- 专利权人： Crystal IS, Inc.
- 当前专利权人： Crystal IS, Inc.
- 当前专利权人地址： US NY Green Island
- 代理机构： Bingham McCutchen LLP
- 主分类号： H01L27/15
- IPC分类号： H01L27/15
摘要：
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
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