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公开(公告)号：US10446391B2
公开(公告)日：2019-10-15
申请号：US13298570
申请日：2011-11-17
IPC分类号： H01L29/06 , H01L21/02 , H01L33/12 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/02
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
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公开(公告)号：US08222650B2
公开(公告)日：2012-07-17
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： H01L27/15
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US20100264460A1
公开(公告)日：2010-10-21
申请号：US12764584
申请日：2010-04-21
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US20080187016A1
公开(公告)日：2008-08-07
申请号：US12020006
申请日：2008-01-25
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译： 制造半导体结构以包括超过其预测临界厚度的应变外延层。
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公开(公告)号：US09437430B2
公开(公告)日：2016-09-06
申请号：US12020006
申请日：2008-01-25
IPC分类号： H01L31/0328 , H01L21/02 , H01L33/08 , H01L33/12
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译： 制造半导体结构以包括超过其预测临界厚度的应变外延层。
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6.发明授权公开(公告)号：US08545629B2
公开(公告)日：2013-10-01
申请号：US11431090
申请日：2006-05-09
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
IPC分类号： H01L49/00
CPC分类号： C30B25/16 , C30B11/003 , C30B23/00 , C30B23/025 , C30B25/10 , C30B25/14 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02634 , H01L29/04 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/66462 , H01L29/7787 , H01L33/0075 , H01L33/025 , H01L33/12 , H01L33/325 , H01L2924/0002 , Y10T428/21 , H01L2924/00
摘要： Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
摘要翻译： 具有直径大于约25mm的AlN的大体积单晶和约10,000cm-2或更小的位错密度以及具有由这些本体晶体制造的任何所需晶体取向表面的高质量AlN衬底。
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公开(公告)号：US08080833B2
公开(公告)日：2011-12-20
申请号：US12764584
申请日：2010-04-21
IPC分类号： H01L33/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US20100135349A1
公开(公告)日：2010-06-03
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US20090283028A1
公开(公告)日：2009-11-19
申请号：US11503660
申请日：2006-08-14
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： C30B1/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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10.发明授权公开(公告)号：US07250360B2
公开(公告)日：2007-07-31
申请号：US11069040
申请日：2005-03-02
申请人： James R. Shealy , Joseph A. Smart
发明人： James R. Shealy , Joseph A. Smart
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/02562 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02557 , H01L21/0262 , H01L21/02658
摘要： A single step process for nucleation and subsequent epitaxial growth on a lattice mismatched substrate is achieved by pre-treating the substrate surface with at least one group III reactant or at least one group II reactant prior to the introduction of a group V reactant or a group VI reactant. The group III reactant or the group II reactant is introduced into a growth chamber at an elevated growth temperature to wet a substrate surface prior to any actual crystal growth. Once the pre-treatment of the surface is complete, a group V reactant or a group VI reactant is introduced to the growth chamber to commence the deposition of a nucleation layer. A buffer layer is then grown on the nucleation layer providing a surface upon which the epitaxial layer is grown preferably without changing the temperature within the chamber.
摘要翻译： 通过在引入V族反应物或基团之前用至少一种III族反应物或至少一种II族反应物预处理底物表面来实现晶格失配衬底上的成核和随后的外延生长的单步过程 VI反应物。 将III族反应物或II族反应物在升高的生长温度下引入生长室中，以在任何实际的晶体生长之前润湿基底表面。 一旦表面的预处理完成，将V族反应物或VI族反应物引入生长室，开始沉积成核层。 然后在成核层上生长缓冲层，提供外延层生长的表面，而不改变室内的温度。
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