发明授权
- 专利标题： Nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US11723481申请日： 2007-03-20
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公开(公告)号： US08227863B2公开(公告)日： 2012-07-24
- 发明人: Shunpei Yamazaki , Yoshinobu Asami , Tamae Takano , Makoto Furuno
- 申请人： Shunpei Yamazaki , Yoshinobu Asami , Tamae Takano , Makoto Furuno
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2006-077893 20060321
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor layer having a channel formation region provided between a pair of impurity regions spaced from each other is provided, and a first insulating layer a floating gate, a second insulating layer, and a control gate are provided above the semiconductor layer. The semiconductor material forming the floating gate preferably has a band gap smaller than that of the semiconductor layer. The band gap of a channel formation region in the semiconductor material forming the floating gate is preferably smaller than that of the semiconductor layer by 0.1 eV or more.
公开/授权文献
- US20070221971A1 Nonvolatile semiconductor memory device 公开/授权日：2007-09-27
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