发明授权
- 专利标题： Dual-damascene process to fabricate thick wire structure
- 专利标题（中）： 双镶嵌工艺制造粗线结构
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申请号： US12564482申请日： 2009-09-22
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公开(公告)号： US08236663B2公开(公告)日： 2012-08-07
- 发明人: Douglas D. Coolbaugh , Keith E. Downes , Peter J Lindgren , Anthony K. Stamper
- 申请人： Douglas D. Coolbaugh , Keith E. Downes , Peter J Lindgren , Anthony K. Stamper
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Richard Kotulak
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method and semiconductor device. In the method, at least one partial via is etched in a stacked structure and a border is formed about the at least one partial via. The method further includes performing thick wiring using selective etching while continuing via etching to at least one etch stop layer.
公开/授权文献
- US20100009509A1 DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE 公开/授权日：2010-01-14
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