发明授权
US08241457B2 Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system
失效
等离子体处理系统，等离子体测量系统，等离子体测量方法和等离子体控制系统
- 专利标题： Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system
- 专利标题（中）： 等离子体处理系统，等离子体测量系统，等离子体测量方法和等离子体控制系统
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申请号： US12058323申请日： 2008-03-28
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公开(公告)号： US08241457B2公开(公告)日： 2012-08-14
- 发明人: Mitsuo Kato , Masaki Sugiyama , Akihiko Hiroe , Tadahiro Ohmi , Masaki Hirayama
- 申请人： Mitsuo Kato , Masaki Sugiyama , Akihiko Hiroe , Tadahiro Ohmi , Masaki Hirayama
- 申请人地址： JP Tokyo JP Sendai-shi
- 专利权人： Tokyo Electron Limited,Tohoku University
- 当前专利权人： Tokyo Electron Limited,Tohoku University
- 当前专利权人地址： JP Tokyo JP Sendai-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-094965 20070330; JP2008-079584 20080326
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; C23C16/00 ; C23C14/00
摘要：
A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.
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