公开(公告)号：US20080241016A1

公开(公告)日：2008-10-02

申请号：US12058323

申请日：2008-03-28

申请人： Mitsuo KATO ,  Masaki Sugiyama ,  Akihiko Hiroe ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Mitsuo KATO ,  Masaki Sugiyama ,  Akihiko Hiroe ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B01J19/12

CPC分类号： H01J37/3299 ,  H01J37/32192 ,  H01J37/32935

摘要： A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.

摘要翻译： 微波等离子体处理系统10包括：处理室100，其中使用等离子体将期望的处理应用于目标物体; 处理室100中的基座106（阶段）以支撑目标物体; 向基座106供给高频电力的高频电源112; 设置在基座106上的电容器108a; 以及测量装置20，当从高频电源112向基座106提供高频电力时，测量电容器108a的一对板的电压。

公开(公告)号：US08241457B2

公开(公告)日：2012-08-14

申请号：US12058323

申请日：2008-03-28

申请人： Mitsuo Kato ,  Masaki Sugiyama ,  Akihiko Hiroe ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Mitsuo Kato ,  Masaki Sugiyama ,  Akihiko Hiroe ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01J37/3299 ,  H01J37/32192 ,  H01J37/32935

摘要： A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.

摘要翻译： 微波等离子体处理系统10包括：处理室100，其中使用等离子体将期望的处理应用于目标物体; 处理室100中的基座106（阶段）以支撑目标物体; 向基座106供给高频电力的高频电源112; 设置在基座106上的电容器108a; 以及测量装置20，当从高频电源112向基座106提供高频电力时，测量电容器108a的一对板的电压。

公开(公告)号：US20070054064A1

公开(公告)日：2007-03-08

申请号：US10566241

申请日：2004-12-24

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi ,  Akihiko Hiroe ,  Masayuki Kitamura

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi ,  Akihiko Hiroe ,  Masayuki Kitamura

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01L21/306 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/463

摘要： A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).

摘要翻译： 微波等离子体处理方法，其中通过微波产生线性等离子体和待处理物体在大气压力下或当物体移动时在大气压附近的压力下进行处理，同时 物体相对于线性等离子体保持在水平位置。 等离子体头具有H平面缝隙天线，并且以波兰的间距（lambdag：具有波导的微波的波长）交替地布置在波导的中心线的两侧。 提供了从槽到发射端等离子体头的距离为n.lambdag / 2的均匀线（n：整数）。

公开(公告)号：US07582569B2

公开(公告)日：2009-09-01

申请号：US10591294

申请日：2004-03-10

申请人： Tadahiro Ohmi ,  Naohisa Goto ,  Nobuhiro Kuga ,  Akihiko Hiroe

发明人： Tadahiro Ohmi ,  Naohisa Goto ,  Nobuhiro Kuga ,  Akihiko Hiroe

IPC分类号： H01L21/302

CPC分类号： H01J37/32229 ,  H01J37/32192

摘要： A distributor (30) includes a square waveguide (31) to be connected to a microwave oscillator (20) and a square waveguide (41) having a plurality of openings (43) formed in a narrow wall (41B). The square waveguide (31) is hollow. A wave delaying member (53) having a relative dielectric constant ∈r is arranged in the square waveguide (41). Narrow walls (31A, 41A) of the two square waveguides (31, 41) are brought into contact with each other, and a communication hole (32) through which the two waveguides (31, 41) communicate with each other is formed in the narrow walls (31A, 41A). The widths of the two waveguides (31, 41) do not become narrow at their connecting portion even if the width of the communication hole (32) is decreased. Thus, a band of a frequency that can pass through the connecting portion is suppressed from becoming narrow. Consequently, reflection loss that occurs when the frequency of electromagnetic waves to be input to the distributor (30) changes can be decreased.

摘要翻译： 分配器（30）包括与微波振荡器（20）连接的方波导（31）和形成在窄壁（41B）中的多个开口部分的方波导41。 方波导（31）是中空的。 具有相对介电常数εr的波延迟构件（53）布置在方波导（41）中。 使两个方波导管（31,41）的窄壁（31A，41A）彼此接触，并且在两个波导管（31,41）彼此连通的连通孔（32） 狭窄的墙壁（31A，41A）。 即使连通孔（32）的宽度减小，两个波导（31,41）的宽度也不会变窄。 因此，可以抑制能够穿过连接部的频率带变窄。 因此，能够减少输入到分配器30的电磁波的频率发生变化时的反射损失。

公开(公告)号：US20070133919A1

公开(公告)日：2007-06-14

申请号：US10591294

申请日：2004-03-10

申请人： Tadahiro Ohmi ,  Naohisa Goto ,  Nobuhiro Kuga ,  Akihiko Hiroe

发明人： Tadahiro Ohmi ,  Naohisa Goto ,  Nobuhiro Kuga ,  Akihiko Hiroe

IPC分类号： G02F1/295

CPC分类号： H01J37/32229 ,  H01J37/32192

摘要： A distributor (30) includes a square waveguide (31) to be connected to a microwave oscillator (20) and a square waveguide (41) having a plurality of openings (43) formed in a narrow wall (41B). The square waveguide (31) is hollow. A wave delaying member (53) having a relative dielectric constant εr is arranged in the square waveguide (41). Narrow walls (31A, 41A) of the two square waveguides (31, 41) are brought into contact with each other, and a communication hole (32) through which the two waveguides (31, 41) communicate with each other is formed in the narrow walls (31A, 41A). The widths of the two waveguides (31, 41) do not become narrow at their connecting portion even if the width of the communication hole (32) is decreased. Thus, a band of a frequency that can pass through the connecting portion is suppressed from becoming narrow. Consequently, reflection loss that occurs when the frequency of electromagnetic waves to be input to the distributor (30) changes can be decreased.

摘要翻译： 分配器（30）包括要连接到微波振荡器（20）的方波导（31）和形成在窄壁（41B）中的多个开口43的方波导41。 方波导（31）是中空的。 具有相对介电常数εL r的波延迟构件（53）布置在方波导（41）中。 使两个方波导管（31,41）的窄壁（31A，41A）彼此接触，并且形成两个波导（31,41）彼此连通的连通孔（32） 在狭窄的墙壁（31 A，41 A）。 即使连通孔（32）的宽度减小，两个波导（31,41）的宽度也不会变窄。 因此，可以抑制能够穿过连接部的频率带变窄。 因此，能够减少输入到分配器30的电磁波的频率发生变化时的反射损失。

公开(公告)号：US20090050895A1

公开(公告)日：2009-02-26

申请号：US12195508

申请日：2008-08-21

申请人： Akihiko Hiroe ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Akihiko Hiroe ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L29/04 ,  H01L21/336 ,  H01L21/67

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/66757 ,  H01L29/78618

摘要： In a semiconductor manufacturing method that manufactures a coplanar type thin film transistor, a microcrystalline film 10 that will become a channel region is formed on a glass substrate S, a sacrificial silicon oxide 20 film is formed on the microcrystalline film 10, and, in a state in which a surface boundary of the microcrystalline film 10 is protected by the sacrificial silicon oxide film 20, a doped silicon film 30 is built up that will become a source region and a drain region. A photoresist R film is applied on the doped silicon film 30 and planarized. With the sacrificial silicon oxide film 20 in an uncovered state, etching is performed until the microcrystalline film 10 and the doped silicon film 30 reside in approximately the same plane.

摘要翻译： 在制造共面型薄膜晶体管的半导体制造方法中，在玻璃基板S上形成成为沟道区的微晶膜10，在微晶膜10上形成牺牲氧化硅20膜，在 由牺牲氧化硅膜20保护微晶膜10的表面边界的状态，构成将成为源极区域和漏极区域的掺杂硅膜30。 将光致抗蚀剂R膜施加在掺杂硅膜30上并平坦化。 在牺牲氧化硅膜20处于未覆盖状态下，进行蚀刻直到微晶膜10和掺杂硅膜30位于大致相同的平面中。

公开(公告)号：US09105450B2

公开(公告)日：2015-08-11

申请号：US13145398

申请日：2009-11-02

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/32238 ,  H05H1/46 ,  H05H2001/4622

摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

摘要翻译： 微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。 同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

公开(公告)号：US08114245B2

公开(公告)日：2012-02-14

申请号：US10304869

申请日：2002-11-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/509 ,  C23C16/52 ,  C23C16/505 ,  C23C16/22 ,  C23C16/06

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266

摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

摘要翻译： 一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。 等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻 完成了。 在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。 辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

公开(公告)号：US20100183827A1

公开(公告)日：2010-07-22

申请号：US12663764

申请日：2008-06-11

申请人： Masaki Hirayama ,  Tadahiro Ohmi ,  Takahiro Horiguchi

发明人： Masaki Hirayama ,  Tadahiro Ohmi ,  Takahiro Horiguchi

IPC分类号： H05H1/46 ,  C23C16/511

CPC分类号： C23C16/511 ,  B05C13/00 ,  H01J37/32192 ,  H01J37/32266 ,  H05H1/46

摘要： A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.

摘要翻译： 提供能够减少电介质部件的使用量的等离子体处理装置。 等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分 暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。

公开(公告)号：US20070221623A1

公开(公告)日：2007-09-27

申请号：US11689180

申请日：2007-03-21

申请人： Takahiro HORIGUCHI ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Takahiro HORIGUCHI ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： B44C1/22 ,  C23C16/00 ,  C23F1/00 ,  H05H1/24

CPC分类号： H01J37/32568 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32211

摘要： There is provided a plasma processing apparatus in which a microwave is propagated into a dielectric body disposed at a top surface of a process chamber through a plurality of slots formed in a bottom face of a rectangular waveguide to excite a predetermined gas supplied into the process chamber into plasma by electric field energy of an electromagnetic field formed on a surface of the dielectric body, to thereby generate plasma with which a substrate is processed, wherein a top face member of the rectangular waveguide is formed of a conductive, nonmagnetic material and is disposed so as to be movable up and down relative to the bottom face of the rectangular waveguide. To change a wavelength in the rectangular waveguide, the top face member of the rectangular waveguide is moved up and down relative to the bottom face of the rectangular waveguide according to conditions of the plasma processing performed in the process chamber, such as gas species, pressure, and a power of the microwave of a microwave supplier.

摘要翻译： 提供了一种等离子体处理装置，其中微波通过形成在矩形波导的底面中的多个槽传播到设置在处理室的顶表面处的电介质体中，以激发供应到处理室中的预定气体 通过形成在电介质体的表面上的电磁场的电场能进入等离子体，从而产生用于处理基板的等离子体，其中矩形波导的顶面部件由导电非磁性材料形成， 以相对于矩形波导的底面上下移动。 为了改变矩形波导中的波长，根据处理室中进行的等离子体处理（例如气体种类，压力）的条件，矩形波导的顶面构件相对于矩形波导的底面上下移动 ，微波炉微波炉的功率。