发明授权
- 专利标题： Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
- 专利标题（中）： 化学气相沉积的高导电性，粘附的钌薄膜
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申请号： US13089909申请日： 2011-04-19
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公开(公告)号： US08241704B2公开(公告)日： 2012-08-14
- 发明人: Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
- 申请人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Hultquist, PLLC
- 代理商 Steven J. Hultquist; Maggie Chappuis
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C16/06
摘要：
A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
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