Invention Grant
US08243878B2 High-resolution X-ray diffraction measurement with enhanced sensitivity
有权
具有增强灵敏度的高分辨率X射线衍射测量
- Patent Title: High-resolution X-ray diffraction measurement with enhanced sensitivity
- Patent Title (中): 具有增强灵敏度的高分辨率X射线衍射测量
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Application No.: US12683436Application Date: 2010-01-07
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Publication No.: US08243878B2Publication Date: 2012-08-14
- Inventor: Boris Yokhin , Isaac Mazor , Alexander Krohmal , Amos Gvirtzman , Gennady Openganden , David Berman , Matthew Wormington
- Applicant: Boris Yokhin , Isaac Mazor , Alexander Krohmal , Amos Gvirtzman , Gennady Openganden , David Berman , Matthew Wormington
- Applicant Address: IL Migdal Haemek
- Assignee: Jordan Valley Semiconductors Ltd.
- Current Assignee: Jordan Valley Semiconductors Ltd.
- Current Assignee Address: IL Migdal Haemek
- Agency: D. Kligler I.P. Services Ltd.
- Main IPC: G01N23/20
- IPC: G01N23/20 ; G01N23/203 ; G01N23/207
Abstract:
A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.
Public/Granted literature
- US20110164730A1 High-Resolution X-Ray Diffraction Measurement with Enhanced Sensitivity Public/Granted day:2011-07-07
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