发明授权
- 专利标题: Method for fabricating integrated MEMS switches and filters
- 专利标题(中): 集成MEMS开关和滤波器的制造方法
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申请号: US12889687申请日: 2010-09-24
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公开(公告)号: US08246846B1公开(公告)日: 2012-08-21
- 发明人: David T. Chang , Tsung-Yuan Hsu
- 申请人: David T. Chang , Tsung-Yuan Hsu
- 申请人地址: US CA Malibu
- 专利权人: HRL Laboratories, LLC
- 当前专利权人: HRL Laboratories, LLC
- 当前专利权人地址: US CA Malibu
- 代理机构: Ladas & Parry
- 主分类号: C23F3/00
- IPC分类号: C23F3/00
摘要:
A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.
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