发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12046637申请日: 2008-03-12
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公开(公告)号: US08252628B2公开(公告)日: 2012-08-28
- 发明人: Yoshihiro Nabe , Hiroshi Asami , Yuji Takaoka , Yoshimichi Harada
- 申请人: Yoshihiro Nabe , Hiroshi Asami , Yuji Takaoka , Yoshimichi Harada
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: SNR Denton US LLP
- 优先权: JP2007-066173 20070315
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.
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