公开(公告)号：US20120286387A1

公开(公告)日：2012-11-15

申请号：US13553389

申请日：2012-07-19

申请人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

发明人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

IPC分类号： H01L31/0224

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0224 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

摘要翻译： 一种半导体器件，包括具有相对面对的第一表面和第二表面的半导体衬底，所述第一表面是活性表面，并且在其上设置有电子元件，焊接电极，用于在所述电子元件的周边部分中连接到所述电子元件， 活性表面，从第二表面朝向焊盘电极延伸以便不到达半导体衬底的第一表面的第一开口，形成为从第一开口的底表面到达焊盘电极并具有较小直径的第二开口 形成为覆盖第一开口和第二开口的侧壁表面的绝缘层和在绝缘层内部形成的导电层，以覆盖至少绝缘层的内壁表面和 第二开口的底面。

公开(公告)号：US08252628B2

公开(公告)日：2012-08-28

申请号：US12046637

申请日：2008-03-12

申请人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

发明人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

IPC分类号： H01L21/76

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0224 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

摘要翻译： 半导体器件包括具有彼此相对的第一和第二表面的半导体衬底，第一表面是通过在其上设置有电子元件的有源表面，形成为在电子元件的周边部分中连接到电子元件的焊盘电极 在所述活性表面上具有从所述第二表面向所述焊盘电极延伸以便不到达所述半导体衬底的所述第一表面的第一开口，形成为从所述第一开口的底表面到达所述焊盘电极的第二开口， 直径小于第一开口的直径，形成为覆盖第一开口和第二开口的侧壁表面的绝缘层，以及形成在绝缘层内部的导电层，以至少覆盖绝缘层的内壁表面 层和第二开口的底表面。

公开(公告)号：US20080224249A1

公开(公告)日：2008-09-18

申请号：US12046637

申请日：2008-03-12

申请人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

发明人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0224 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

摘要翻译： 半导体器件包括具有彼此相对的第一和第二表面的半导体衬底，第一表面是通过在其上设置有电子元件的有源表面，形成为在电子元件的周边部分中连接到电子元件的焊盘电极 在所述活性表面上具有从所述第二表面向所述焊盘电极延伸以便不到达所述半导体衬底的所述第一表面的第一开口，形成为从所述第一开口的底表面到达所述焊盘电极的第二开口， 直径小于第一开口的直径，形成为覆盖第一开口和第二开口的侧壁表面的绝缘层，以及形成在绝缘层内部的导电层，以至少覆盖绝缘层的内壁表面 层和第二开口的底表面。

公开(公告)号：US08564101B2

公开(公告)日：2013-10-22

申请号：US12348988

申请日：2009-01-06

申请人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

发明人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

IPC分类号： H01L29/40

CPC分类号： H01L27/14618 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/16 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2224/05599

摘要： A semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has another insulating layer formed in the via hole and a conductive layer formed thereon. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.

摘要翻译： 一种在半导体衬底中具有通孔互连的半导体器件。 绝缘层形成在半导体衬底上。 通过半导体衬底和绝缘层形成通孔。 通孔布线具有形成在通孔中的另一绝缘层和形成在其上的导电层。 形成在通孔中的绝缘层形成为使得通孔的内表面基本上平坦化。

公开(公告)号：US07851880B2

公开(公告)日：2010-12-14

申请号：US11944831

申请日：2007-11-26

申请人： Masami Suzuki ,  Yoshimichi Harada ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Masaaki Takizawa ,  Chiaki Sakai

发明人： Masami Suzuki ,  Yoshimichi Harada ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Masaaki Takizawa ,  Chiaki Sakai

IPC分类号： H01L31/0224 ,  H01L23/48

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/02 ,  H01L27/14636 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042

摘要： A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.

摘要翻译： 固态成像装置包括具有成像区域的前侧的半导体基板和电极焊盘，所述成像区域具有光学传感器阵列，所述电极焊盘围绕所述摄像区域的周边设置; 透明基板，其与半导体基板的前端接合，在其间具有密封剂; 从所述电极焊盘延伸穿过所述半导体衬底到所述半导体衬底的下侧的下侧布线; 以及保护膜，其由无机绝缘材料构成并插入在所述半导体基板和所述密封剂之间，所述保护膜至少覆盖所述电极焊盘。

公开(公告)号：US20110136342A1

公开(公告)日：2011-06-09

申请号：US13027614

申请日：2011-02-15

申请人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

发明人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

IPC分类号： H01L21/768

CPC分类号： H01L27/14618 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/16 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2224/05599

摘要： A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating layer is formed on the semiconductor substrate. The via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has a conductive layer formed on an insulating layer in the via hole. The surface of the insulating layer formed on the inner surface of the via hole is substantially planarized by filling a recessed portion on a boundary between the semiconductor substrate and the insulating layer formed on the semiconductor substrate.

摘要翻译： 提供了包括半导体衬底，绝缘层，通孔和通孔互连的半导体器件。 绝缘层形成在半导体衬底上。 通孔形成为穿过半导体衬底和绝缘层。 通孔互连具有形成在通孔中的绝缘层上的导电层。 通过在半导体衬底和形成在半导体衬底上的绝缘层之间的边界填充凹陷部分，在通孔的内表面上形成的绝缘层的表面基本平坦化。

公开(公告)号：US20090200679A1

公开(公告)日：2009-08-13

申请号：US12348988

申请日：2009-01-06

申请人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

发明人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L27/14618 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/16 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2224/05599

摘要： A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating layer is formed on the semiconductor substrate. The via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has a conductive layer formed on an insulating layer in the via hole. The surface of the insulating layer formed on the inner surface of the via hole is substantially planarized by filling a recessed portion on a boundary between the semiconductor substrate and the insulating layer formed on the semiconductor substrate.

摘要翻译： 提供了包括半导体衬底，绝缘层，通孔和通孔互连的半导体器件。 绝缘层形成在半导体衬底上。 通孔形成为穿过半导体衬底和绝缘层。 通孔互连具有形成在通孔中的绝缘层上的导电层。 通过在半导体衬底和形成在半导体衬底上的绝缘层之间的边界填充凹陷部分，在通孔的内表面上形成的绝缘层的表面基本平坦化。

公开(公告)号：US08273657B2

公开(公告)日：2012-09-25

申请号：US13027614

申请日：2011-02-15

申请人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

发明人： Yoshimichi Harada ,  Masami Suzuki ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Tatsuo Suemasu ,  Hideyuki Wada ,  Masanobu Saruta

IPC分类号： H01L21/44

CPC分类号： H01L27/14618 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/16 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2224/05599

摘要： A method for manufacturing a semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. Another insulating layer is formed in the via hole, and a conductive layer of the through-hole interconnection is subsequently formed. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.

摘要翻译： 一种在半导体衬底中具有通孔互连的半导体装置的制造方法。 绝缘层形成在半导体衬底上。 通过半导体衬底和绝缘层形成通孔。 在通孔中形成另一绝缘层，随后形成通孔互连的导电层。 形成在通孔中的绝缘层形成为使得通孔的内表面基本上平坦化。

公开(公告)号：US20080128848A1

公开(公告)日：2008-06-05

申请号：US11944831

申请日：2007-11-26

申请人： Masami Suzuki ,  Yoshimichi Harada ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Masaaki Takizawa ,  Chiaki Sakai

发明人： Masami Suzuki ,  Yoshimichi Harada ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Masaaki Takizawa ,  Chiaki Sakai

IPC分类号： H01L31/0224

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/02 ,  H01L27/14636 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042

摘要： A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.

摘要翻译： 固态成像装置包括具有成像区域的前侧的半导体基板和电极焊盘，所述成像区域具有光学传感器阵列，所述电极焊盘围绕所述摄像区域的周边设置; 透明基板，其与半导体基板的前端接合，在其间具有密封剂; 从所述电极焊盘延伸穿过所述半导体衬底到所述半导体衬底的下侧的下侧布线; 以及保护膜，其由无机绝缘材料构成并插入在所述半导体基板和所述密封剂之间，所述保护膜至少覆盖所述电极焊盘。

公开(公告)号：US06936525B2

公开(公告)日：2005-08-30

申请号：US10236771

申请日：2002-09-06

申请人： Kazuo Nishiyama ,  Hiroshi Ozaki ,  Yuji Takaoka ,  Teruo Hirayama

发明人： Kazuo Nishiyama ,  Hiroshi Ozaki ,  Yuji Takaoka ,  Teruo Hirayama

IPC分类号： H01L21/683 ,  H01L21/301 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L23/12 ,  H01L23/31 ,  H01L23/485 ,  H01L21/46 ,  H01L21/78

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05571 ,  H01L2224/1131 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/3011 ,  H01L2224/73203 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacturing the semiconductor chips comprises the steps of: pasting on a substrate an adhesive sheet having a property to retain its adhesive strength prior to a processing, then lose its adhesive strength after the processing; fixing a plurality of non-defective bare chips on this adhesive sheet, with their Al electrode pad surfaces facing down; coating a resin on a whole area other than the Al electrode pad surfaces of the plurality of non-defective bare chips including interspaces therebetween; applying a predetermined process to the adhesive sheet to weaken its adhesive strength of the adhesive sheet; peeling off a pseudo wafer bonding non-defective bare chips; and dicing the plurality of non-defective bare chips into a discrete non-defective electronic part by cutting the pseudo wafer at a position of the resin between respective non-defective bare chips.

摘要翻译： 制造半导体芯片的方法包括以下步骤：在基板上粘贴具有在加工之前保持其粘合强度的性能的粘合片，然后在加工后失去其粘合强度; 在该粘合片上固定多个无缺陷裸芯片，其Al电极焊盘表面朝下; 在除了包括它们之间的间隙的多个无缺陷裸芯片的Al电极焊盘表面以外的整个区域上涂覆树脂; 对粘合片施加预定的处理以削弱其粘合片的粘合强度; 剥离伪晶片结合无缺陷裸芯片; 并且通过在各个无缺陷裸芯片之间的树脂的位置处切割伪晶片将多个无缺陷裸芯片切割成离散的无缺陷电子部件。