发明授权
- 专利标题： Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same
- 专利标题（中）： 包含碳化硅层的碳化硅半导体器件及其制造方法
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申请号： US12267040申请日： 2008-11-07
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公开(公告)号： US08252672B2公开(公告)日： 2012-08-28
- 发明人: Tomokatsu Watanabe , Sunao Aya , Naruhisa Miura , Keiko Sakai , Shohei Yoshida , Toshikazu Tanioka , Yukiyasu Nakao , Yoichiro Tarui , Masayuki Imaizumi
- 申请人： Tomokatsu Watanabe , Sunao Aya , Naruhisa Miura , Keiko Sakai , Shohei Yoshida , Toshikazu Tanioka , Yukiyasu Nakao , Yoichiro Tarui , Masayuki Imaizumi
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-095693 20080402
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
A method of manufacturing a silicon carbide semiconductor device having a silicon carbide layer, the method including a step of implanting at least one of Al ions, B ions and Ga ions having an implantation concentration in a range not lower than 1E19 cm−3 and not higher than 1E21 cm−3 from a main surface of the silicon carbide layer toward the inside of the silicon carbide layer while maintaining the temperature of the silicon carbide layer at 175° C. or higher, to form a p-type impurity layer; and forming a contact electrode whose back surface establishes ohmic contact with a front surface of the p-type impurity layer on the front surface of the p-type impurity layer.