发明授权
US08262796B2 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
有权
＆lt; Ga 2 O 3单晶生长法，薄膜单晶生长法，Ga 2 O 3发光元件及其制造方法
- 专利标题： β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
- 专利标题（中）： ＆lt; Ga 2 O 3单晶生长法，薄膜单晶生长法，Ga 2 O 3发光元件及其制造方法
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申请号： US12659609申请日： 2010-03-15
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公开(公告)号： US08262796B2公开(公告)日： 2012-09-11
- 发明人: Noboru Ichinose , Kiyoshi Shimamura , Kazuo Aoki , Encarnacion Antonia Garcia Villora
- 申请人： Noboru Ichinose , Kiyoshi Shimamura , Kazuo Aoki , Encarnacion Antonia Garcia Villora
- 申请人地址： JP Tokyo
- 专利权人： Waseda University
- 当前专利权人： Waseda University
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2003-046552 20030224; JP2003-066020 20030312; JP2003-137916 20030515
- 主分类号： C30B25/00
- IPC分类号： C30B25/00
摘要：
A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.
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