发明授权
- 专利标题： Shallow trench isolation structure and method for forming the same
- 专利标题（中）： 浅沟隔离结构及其形成方法
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申请号： US13119004申请日： 2011-01-27
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公开(公告)号： US08269307B2公开(公告)日： 2012-09-18
- 发明人: Huicai Zhong , Haizhou Yin , Qingqing Liang , Huilong Zhu
- 申请人： Huicai Zhong , Haizhou Yin , Qingqing Liang , Huilong Zhu
- 申请人地址： CN Beijing
- 专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址： CN Beijing
- 代理机构： Goodwin Procter LLP
- 优先权： CN201010552589 20101119
- 国际申请： PCT/CN2011/070693 WO 20110127
- 国际公布： WO2012/065370 WO 20120524
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
The invention provides a STI structure and a method for manufacturing the same. The STI includes a semiconductor substrate; a first trench formed on the upper surface of the semiconductor substrate and filled with an epitaxial layer, wherein the upper surface of the epitaxial layer is higher than that of the semiconductor substrate; and a second trench formed on the epitaxial layer and filled with a first dielectric layer, wherein the upper surface of the first dielectric layer is flush with that of the epitaxial layer, and the width of the second trench is smaller than that of the first trench. The invention reduces the influences of divots on performance of the semiconductor device.
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