发明授权
- 专利标题: Method and apparatus for growing high purity 2H-silicon carbide
- 专利标题(中): 生长高纯度2H-碳化硅的方法和装置
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申请号: US12821877申请日: 2010-06-23
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公开(公告)号: US08278666B1公开(公告)日: 2012-10-02
- 发明人: Narsingh B. Singh , Sean R. McLaughlin , Thomas J. Knight , Robert M. Young , Brian P. Wagner , David A. Kahler , Andre E. Berghmans , David J. Knuteson , Ty R. McNutt , Jerry W. Hedrick, Jr. , George M. Bates , Kenneth Petrosky
- 申请人: Narsingh B. Singh , Sean R. McLaughlin , Thomas J. Knight , Robert M. Young , Brian P. Wagner , David A. Kahler , Andre E. Berghmans , David J. Knuteson , Ty R. McNutt , Jerry W. Hedrick, Jr. , George M. Bates , Kenneth Petrosky
- 申请人地址: US VA Falls Church
- 专利权人: Northrop Grumman Systems Corporation
- 当前专利权人: Northrop Grumman Systems Corporation
- 当前专利权人地址: US VA Falls Church
- 代理机构: Tarolli, Sundheim, Covell & Tummino LLP
- 主分类号: H01L29/15
- IPC分类号: H01L29/15 ; H01L31/0312
摘要:
The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.