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31 条记录 (耗时 0.019 秒)

    Stacked interconnect structure and method of making the same
    1.
    发明授权
    Stacked interconnect structure and method of making the same 有权

    公开(公告)号：US10297532B2

    公开(公告)日：2019-05-21

    申请号：US15186175

    申请日：2016-06-17

    申请人： Thomas J. Knight

    发明人： Thomas J. Knight

    IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L21/764 ,  H01L23/482 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

    摘要： A stacked interconnect structure includes a first conductive layer, a second conductive layer, and a first dielectric layer disposed between the first and second conductive layers and having an air gap in a portion of the first dielectric layer that separates the first and second conductive layers. A second dielectric layer is parallel to the first conductive layer, a third dielectric layer overlays a portion of the second dielectric layer and contacts two opposing surfaces of the second conductive layer. A first via extends into the air gap of the first dielectric layer, wherein the second conductive layer is separated from the first via by a portion of the third dielectric layer that extends from a given surface of the third dielectric layer to the second dielectric layer, and a second via that extends from the given surface of the third dielectric layer to the second conductive layer.

    Infrared multiplier for photo-conducting sensors
    2.
    发明授权
    Infrared multiplier for photo-conducting sensors 有权
    用于光电传感器的红外线倍增器

    公开(公告)号：US09252182B2

    公开(公告)日：2016-02-02

    申请号：US13603788

    申请日：2012-09-05

    申请人： Thomas J. Knight ,  Christopher F. Kirby

    发明人： Thomas J. Knight ,  Christopher F. Kirby

    IPC分类号： H01L31/0216 ,  H01L31/0232 ,  H01L27/146 ,  G01J5/08

    CPC分类号： H01L27/1467 ,  G01J5/0853 ,  H01L31/02161 ,  H01L31/0232 ,  H01L31/02327

    摘要： Photo-conducting infrared sensors are provided including a substrate (e.g., silicon) with one or more trenches formed on a first surface. An infrared-reflective film can be deposited directly or indirectly onto and conforming in shape with the first surface of the substrate. A lead chalcogenide film can be deposited directly or indirectly over the top of the infrared-reflective film and conforming in shape with the first surface of the substrate. Accordingly, the infrared-reflective film is directly or indirectly sandwiched between the substrate and the lead chalcogenide film.

    摘要翻译： 提供了导电红外传感器，其包括具有形成在第一表面上的一个或多个沟槽的衬底（例如硅）。 可以将红外线反射膜直接或间接沉积到基板的第一表面上并与其成形。 铅硫族化物膜可以直接或间接沉积在红外反射膜的顶部上并且与基底的第一表面形状一致。 因此，红外线反射膜直接或间接夹在基板和铅硫族化物膜之间。

    STACKED INTERCONNECT STRUCTURE AND METHOD OF MAKING THE SAME
    3.
    发明申请
    STACKED INTERCONNECT STRUCTURE AND METHOD OF MAKING THE SAME 有权
    堆叠式互连结构及其制作方法

    公开(公告)号：US20150255375A1

    公开(公告)日：2015-09-10

    申请号：US14198281

    申请日：2014-03-05

    申请人： THOMAS J. KNIGHT

    发明人： THOMAS J. KNIGHT

    IPC分类号： H01L23/482 ,  H01L21/768 ,  H01L23/48 ,  H01L21/764

    CPC分类号： H01L23/4821 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/7688 ,  H01L21/76883 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is provided of forming an interconnect structure. The method comprises forming a first dielectric layer overlying a first conductive layer, etching a trench opening in the first dielectric layer, depositing a sacrificial material layer in the trench opening, and forming a second conductive layer overlying the sacrificial layer. The method also comprises forming a via to the sacrificial layer, and performing an etch to remove the sacrificial material layer through the via and leave a resultant air gap between the first conductive layer and the second conductive layer increasing the effective dielectric constant between the first and second conductive layers.

    摘要翻译： 提供形成互连结构的方法。 该方法包括形成覆盖第一导电层的第一电介质层，蚀刻第一电介质层中的沟槽开口，在沟槽开口中沉积牺牲材料层，以及形成覆盖牺牲层的第二导电层。 该方法还包括将通孔形成到牺牲层，以及执行蚀刻以通过通孔移除牺牲材料层，并且在第一导电层和第二导电层之间留下合成的气隙，从而增加第一和第二导电层之间的有效介电常数 第二导电层。

    Use of prolines for improving growth and other properties of plants and algae
    4.
    发明授权
    Use of prolines for improving growth and other properties of plants and algae 有权
    使用脯氨酸来改善植物和藻类的生长和其他性质

    公开(公告)号：US06593275B1

    公开(公告)日：2003-07-15

    申请号：US10124568

    申请日：2002-04-16

    申请人： Pat J. Unkefer ,  Thomas J. Knight ,  Rodolfo A. Martinez

    发明人： Pat J. Unkefer ,  Thomas J. Knight ,  Rodolfo A. Martinez

    IPC分类号： A01N4336

    CPC分类号： A01N43/36 ,  Y02P60/246

    摘要： Increasing the concentration of prolines, such as 2-hydroxy-5-oxoproline, in the foliar portions of plants has been shown to cause an increase in carbon dioxide fixation, growth rate, dry weight, nutritional value (amino acids), nodulation and nitrogen fixation, photosynthetically derived chemical energy, and resistance to insect pests over the same properties for wild type plants. This can be accomplished in four ways: (1) the application of a solution of the proline directly to the foliar portions of the plant by spraying these portions; (2) applying a solution of the proline to the plant roots; (3) genetically engineering the plant and screening to produce lines that over-express glutamine synthetase in the leaves which gives rise to increased concentration of the metabolite, 2-hydroxy-5-oxoproline (this proline is also known as 2-oxoglutaramate); and (4) impairing the glutamine synthetase activity in the plant roots which causes increased glutamine synthetase activity in the leaves which gives rise to increased concentration of 2-hydroxy-5-oxoproline. Prolines have also been found to induce similar effects in algae.

    摘要翻译： 植物叶片中增加脯氨酸浓度，如2-羟基-5-氧代脯氨酸，已被证明导致二氧化碳固定，生长速率，干重，营养价值（氨基酸），结瘤和氮素的增加 固定，光合作用衍生的化学能，以及对野生型植物具有相同性质的抗病虫害。 这可以通过四种方式实现：（1）通过喷洒这些部分将脯氨酸溶液直接施加到植物的叶面部分; （2）将脯氨酸溶液施用于植物根部; （3）对植物进行遗传工程和筛选，以产生过量表达叶中谷氨酰胺合成酶的产生线，从而导致代谢物浓度增加，2-羟基-5-氧代脯氨酸（该脯氨酸也称为2-氧代谷氨酸）。 （4）损害植物根系中的谷氨酰胺合成酶活性，导致叶中谷氨酰胺合成酶活性升高，导致2-羟基-5-氧代脯氨酸浓度增加。 脯氨酸也被发现在藻类中诱发类似的作用。

    Transgenic Plants with Enhanced Growth Characteristics
    6.
    发明申请
    Transgenic Plants with Enhanced Growth Characteristics 审中-公开
    具有增强生长特性的转基因植物

    公开(公告)号：US20100186121A1

    公开(公告)日：2010-07-22

    申请号：US12551271

    申请日：2009-08-31

    申请人： Pat J. Unkefer ,  Penelope S. Anderson ,  Thomas J. Knight

    发明人： Pat J. Unkefer ,  Penelope S. Anderson ,  Thomas J. Knight

    IPC分类号： A01H5/00 ,  C12N15/82

    CPC分类号： C12N9/1096 ,  C12N15/8261 ,  Y02A40/146

    摘要： The invention relates to transgenic plants exhibiting dramatically enhanced growth rates, greater seed and fruit/pod yields, earlier and more productive flowering, more efficient nitrogen utilization, increased tolerance to high salt conditions, and increased biomass yields. In one embodiment, transgenic plants engineered to over-express both glutamine phenylpyruvate transaminase (GPT) and glutamine synthetase (GS) are provided. The GPT+GS double-transgenic plants of the invention consistently exhibit enhanced growth characteristics, with T0 generation lines showing an increase in biomass over wild type counterparts of between 50% and 300%. Generations that result from sexual crosses and/or selfing typically perform even better, with some of the double-transgenic plants achieving an astounding four-fold biomass increase over wild type plants.

    摘要翻译： 本发明涉及显着增强的生长速率，更大的种子和果实/荚果产量，更早和更有效的开花，更有效的氮利用，增加的对高盐条件的耐受性和增加的生物量产量的转基因植物。 在一个实施方案中，提供了改造为过表达谷氨酰胺苯丙酮酸转氨酶（GPT）和谷氨酰胺合成酶（GS）的转基因植物。 本发明的GPT + GS双转基因植物始终表现出增强的生长特性，其中T0代系显示生物量比野生型对应物的增加在50％至300％之间。 由性交和/或自交产生的一代通常表现得更好，一些双转基因植物比野生型植物实现惊人的四倍生物量增加。

    COOL IMPACT-IONIZATION TRANSISTOR AND METHOD FOR MAKING SAME
    7.
    发明申请
    COOL IMPACT-IONIZATION TRANSISTOR AND METHOD FOR MAKING SAME 审中-公开
    冷却冲击离子晶体管及其制造方法

    公开(公告)号：US20090283824A1

    公开(公告)日：2009-11-19

    申请号：US12258236

    申请日：2008-10-24

    申请人： Thomas J. Knight ,  Eric J. Stewart ,  Joseph T. Smith ,  Sean McLaughlin ,  Narsingh B. Singh

    发明人： Thomas J. Knight ,  Eric J. Stewart ,  Joseph T. Smith ,  Sean McLaughlin ,  Narsingh B. Singh

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7391 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/32

    摘要： In one embodiment, the disclosure relates to a low-power semiconductor switching device, having a substrate supporting thereon a semiconductor body; a source electrode coupled to the semiconductor body at a source interface region; a drain electrode coupled to the semiconductor body at a drain interface region; a gate oxide film formed over a region of the semiconductor body, the gate oxide film interfacing between a gate electrode and the semiconductor body; wherein at least one of the source interface region or the drain interface region defines a sharp junction into the semiconductor body.

    摘要翻译： 在一个实施例中，本公开涉及一种低功率半导体开关器件，其具有在其上支撑半导体本体的衬底; 在源极接口区域耦合到半导体本体的源极; 漏极，其在漏极接口区域耦合到所述半导体本体; 形成在所述半导体主体的区域上的栅极氧化膜，所述栅极氧化膜在栅电极和所述半导体本体之间相互连接; 其中所述源极界面区域或所述漏极界面区域中的至少一个限定到所述半导体本体中的尖锐结。

    Embedded capacitor and method of fabricating the same
    9.
    发明授权
    Embedded capacitor and method of fabricating the same 有权
    嵌入式电容器及其制造方法

    公开(公告)号：US08551856B2

    公开(公告)日：2013-10-08

    申请号：US13240748

    申请日：2011-09-22

    申请人： Michael Rennie ,  Thomas J. Knight

    发明人： Michael Rennie ,  Thomas J. Knight

    IPC分类号： H01L21/20 ,  H01L21/02

    CPC分类号： H01L28/90 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods are provided for forming a capacitor. In one embodiment, a method comprises providing an insulator material layer over a substrate, etching at least one via in the insulator material layer and depositing a contact material fill in the at least one via to form a first set of contacts. The method further comprises etching the insulator material layer adjacent at least one contact of the first set of contacts to form at least one void, depositing a dielectric material layer over the at least one void and over the first set of contacts and depositing a contact material fill in the at least void to form a second set of contacts.

    摘要翻译： 提供了形成电容器的方法。 在一个实施例中，一种方法包括在衬底上提供绝缘体材料层，在绝缘体材料层中蚀刻至少一个通孔，并且在至少一个通孔中沉积接触材料填充物以形成第一组触点。 该方法还包括：蚀刻与第一组触点的至少一个触点相邻的绝缘体材料层，以形成至少一个空隙，在至少一个空隙上并在第一组触点上沉积介电材料层，并沉积触点材料 填写至少空格以形成第二组联系人。