公开(公告)号：US20170194527A1

公开(公告)日：2017-07-06

申请号：US15356152

申请日：2016-11-18

申请人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

发明人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/0336 ,  H01L27/144 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US5788765A

公开(公告)日：1998-08-04

申请号：US709398

申请日：1996-08-30

申请人： Narsingh B. Singh ,  William D. Partlow ,  Steven Strauch ,  Albert M. Stewart ,  John F. Jackovitz ,  David W. Coffey

发明人： Narsingh B. Singh ,  William D. Partlow ,  Steven Strauch ,  Albert M. Stewart ,  John F. Jackovitz ,  David W. Coffey

IPC分类号： C30B7/00 ,  C30B7/08

CPC分类号： C30B7/00 ,  C30B29/10

摘要： Crystals formed of a solid-solution of K.sub.2 Ni(SO.sub.4).sub.2 6H.sub.2 O provide very good materials for filtering ultraviolet light and will not deteriorate in temperatures as high as 110.degree. C. They are particularly useful in sensing devices which seek to identify the presence of ultraviolet light in the UV missile warning band.

摘要翻译： 由K2Ni（SO4）26H2O的固溶体形成的晶体提供了非常好的过滤紫外线的材料，并且不会在高达110℃的温度下劣化。它们特别适用于寻求识别紫外线的存在的设备 在紫外线导弹警告带。

公开(公告)号：US5504615A

公开(公告)日：1996-04-02

申请号：US165291

申请日：1993-12-13

申请人： Narsingh B. Singh ,  Milton S. Gottlieb ,  James P. McHugh ,  Robert Mazelsky

发明人： Narsingh B. Singh ,  Milton S. Gottlieb ,  James P. McHugh ,  Robert Mazelsky

IPC分类号： G02F1/00 ,  G02F1/33 ,  G02F1/11

CPC分类号： G02F1/0018 ,  C01P2002/84 ,  G02F1/33

摘要： Acousto-optical devices utilize crystals of a novel material thallium arsenic sulfide (Tl.sub.3 AsS.sub.3) grown from a melt. A Tl.sub.3 AsS.sub.3 crystal is cut and parallel faces are prepared and polished. A piezoelectric transducer connected to an RF generator is placed on the acoustic face to generate sound waves. The light is directed through the optical face of the crystal and interacts with the acoustic waves. These devices may be used in signal processing, spectrum analyzing, spectroscopic, liquid analyzing and spectral imaging systems.

摘要翻译： 声光装置使用从熔体生长的新型材料铊硫化砷（Tl3AsS3）的晶体。 切割Tl3AsS3晶体并制备并平面。 连接到RF发生器的压电换能器放置在声表面上以产生声波。 光被引导通过晶体的光学面并与声波相互作用。 这些器件可用于信号处理，频谱分析，光谱，液体分析和光谱成像系统。

公开(公告)号：US09570646B2

公开(公告)日：2017-02-14

申请号：US14185567

申请日：2014-02-20

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US5563730A

公开(公告)日：1996-10-08

申请号：US264129

申请日：1994-06-21

申请人： Narsingh B. Singh ,  James P. McHugh ,  Emmanuel P. Supertzi ,  Tom Henningsen ,  Richard P. Storrick ,  Robert Mazelsky

发明人： Narsingh B. Singh ,  James P. McHugh ,  Emmanuel P. Supertzi ,  Tom Henningsen ,  Richard P. Storrick ,  Robert Mazelsky

IPC分类号： C01B19/00 ,  G02F1/00 ,  G02F1/33 ,  G02F1/355

CPC分类号： C01B19/002 ,  G02F1/0018 ,  G02F1/3551 ,  C01P2002/50 ,  C01P2002/84 ,  G02F1/33

摘要： Crystals formed of Tl.sub.3 AsS.sub.3 provide very good materials for the nonlinear optical conversion efficiency. The crystals are useful in nonlinear optical devices such as harmonic generators and optical parametric oscillators, and in linear applications such as acousto-optical devices. The method of preparing such crystals is also disclosed.

摘要翻译： 由Tl3AsS3形成的晶体为非线性光学转换效率提供了非常好的材料。 这些晶体在诸如谐波发生器和光学参量振荡器的非线性光学器件中以及诸如声光器件的线性应用中是有用的。 还公开了制备这种晶体的方法。

公开(公告)号：US10211359B2

公开(公告)日：2019-02-19

申请号：US15356152

申请日：2016-11-18

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0352

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US20150236186A1

公开(公告)日：2015-08-20

申请号：US14185567

申请日：2014-02-20

申请人： NARSINGH B. SINGH ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： NARSINGH B. SINGH ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L31/0336 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US07683400B1

公开(公告)日：2010-03-23

申请号：US11474398

申请日：2006-06-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： H01L29/08

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

公开(公告)号：US20080218940A1

公开(公告)日：2008-09-11

申请号：US11713783

申请日：2007-03-05

申请人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

发明人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

IPC分类号： H01G5/013 ,  C01F11/02 ,  C01F17/00 ,  C01G23/00 ,  C01G3/02 ,  H01G5/011

CPC分类号： C01G23/002 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3281 ,  H01G4/105 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/306

摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaC 3 3 Ti 4 O 12或La 3 N 3的电介质 > 5 SiO 4。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器

公开(公告)号：US5980789A

公开(公告)日：1999-11-09

申请号：US58125

申请日：1998-04-10

申请人： Nils C. Fernelius ,  Narsingh B. Singh ,  Dennis R. Suhre ,  Vijay Balakrishna

发明人： Nils C. Fernelius ,  Narsingh B. Singh ,  Dennis R. Suhre ,  Vijay Balakrishna

IPC分类号： C30B11/00 ,  G02F1/355 ,  F21V9/00 ,  G02B5/20 ,  G02F1/35 ,  C01B19/04

CPC分类号： B82Y20/00 ,  C30B11/00 ,  C30B29/46 ,  G02F1/3556

摘要： A new method for improving the mechanical properties and nonlinear optical performance characteristics of gallium selenide crystals (GaSe) is disclosed. A charge of GaSe crystals was doped with indium before being made into a crystal. The indium-doped GaSe crystals have improved physical properties in that they can be cut along the cleave planes and the cleaved surfaces polished without the usual delaminations typically observed in prior art pure GaSe crystals. The indium-doped crystals were tested in a second harmonic generation (SHG) system and found to have nearly twice the SHG efficiency as pure, or undoped, GaSe crystals.

摘要翻译： 公开了一种改善镓硒晶体（GaSe）的机械性能和非线性光学性能特性的新方法。 在制成晶体之前，用铟掺杂GaSe晶体的电荷。 铟掺杂的GaSe晶体具有改善的物理性能，因为它们可以沿着切割面切割，并且在没有通常在现有技术的纯GaSe晶体中观察到的通常的分层的情况下抛光的表面被切割。 掺杂铟的晶体在二次谐波发生（SHG）系统中进行了测试，发现具有几倍于SHG效率的纯度或未掺杂的GaSe晶体的两倍。