发明授权
- 专利标题: Etching process state judgment method and system therefor
- 专利标题(中): 蚀刻过程状态判断方法及其系统
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申请号: US12385273申请日: 2009-04-03
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公开(公告)号: US08282849B2公开(公告)日: 2012-10-09
- 发明人: Toshihiro Morisawa , Shoji Ikuhara , Akira Kagoshima , Daisuke Shiraishi
- 申请人: Toshihiro Morisawa , Shoji Ikuhara , Akira Kagoshima , Daisuke Shiraishi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2008-098111 20080404
- 主分类号: G01L21/30
- IPC分类号: G01L21/30
摘要:
An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.