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公开(公告)号：US08282849B2
公开(公告)日：2012-10-09
申请号：US12385273
申请日：2009-04-03
IPC分类号： G01L21/30
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译： 一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。 通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。
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公开(公告)号：US20090253222A1
公开(公告)日：2009-10-08
申请号：US12385273
申请日：2009-04-03
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译： 一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。 通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。
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公开(公告)号：US08992721B2
公开(公告)日：2015-03-31
申请号：US12696571
申请日：2010-01-29
申请人： Akira Kagoshima , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
发明人： Akira Kagoshima , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
CPC分类号： H01J37/32926 , G05B13/048 , G05B2219/31357 , H01J37/32935
摘要： A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.
摘要翻译： 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制回路中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。
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公开(公告)号：US20110083808A1
公开(公告)日：2011-04-14
申请号：US12696571
申请日：2010-01-29
申请人： Akira KAGOSHIMA , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
发明人： Akira KAGOSHIMA , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
IPC分类号： H01L21/3065
CPC分类号： H01J37/32926 , G05B13/048 , G05B2219/31357 , H01J37/32935
摘要： A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.
摘要翻译： 一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值 楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制 下一个试样的加工量。 因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制回路中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果 当过程发生变化时。
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5.发明授权System for monitoring and controlling a semiconductor manufacturing apparatus using prediction model equation 有权使用预测模型方程式监测和控制半导体制造装置的系统公开(公告)号：US07343217B2
公开(公告)日：2008-03-11
申请号：US11439265
申请日：2006-05-24
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.
摘要翻译： 用于处理半导体晶片的半导体处理装置包括用于监视处理状态的多个传感器，处理结果输入单元，用于生成用于预测处理结果的模型方程式的模型方程生成单元，预测处理结果预测单元 处理结果，以及处理配方控制单元。 此外，提供了一种系统，其包括在远程位置处提供模型方程生成单元，并且通过网络将生成的预测模型方程发送到半导体处理装置，以通过处理配方控制来控制半导体处理装置的处理状态 单元。
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6.发明授权Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus 失效蚀刻装置，自偏压测定方法以及蚀刻装置的监视方法公开(公告)号：US07330346B2
公开(公告)日：2008-02-12
申请号：US11506791
申请日：2006-08-21
IPC分类号： H02N13/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism 1 and 10 for chucking a sample 2, a mechanism 13 and 14 for supplying cooling gas 12 to a rear surface of the sample 2 and controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the sample 2 being processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the sample 2 when high-frequency bias power is applied to the sample 2 being processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.
摘要翻译： 本发明提供了一种用于通过简单的过程在任意蚀刻条件下估计自偏压的装置。 本发明提供了一种用于测量蚀刻装置的自偏压的方法，该蚀刻装置包括用于夹持样品2的静电卡盘机构1和10，用于将冷却气体12供应到样品2的后表面的机构13和14，并且控制 其压力，以及用于根据正在处理的样品2的背面压力控制状态来测量样品的静电卡盘的相对力的装置，其中样品的静电卡盘的相对力和对应于 当对待处理的样品2施加高频偏置功率时，基于样品2的背面压力控制获取静电卡盘的力，并且将样品的静电卡盘与静电卡盘电压的相对力对应于 当高频时，基于样品的背面压力控制状态获取静电卡盘的力 cy偏压功率不会被施加到正在处理的样品，并且使用所获取的静电卡盘的力和对应于两种状态的静电卡盘电压来估计自偏压。
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公开(公告)号：US20100132888A1
公开(公告)日：2010-06-03
申请号：US12699382
申请日：2010-02-03
申请人： Shoji IKUHARA , Daisuke Shiraishi , Hideyuki Yamamoto , Akira Kagoshima , Hiromichi Enami , Yosuke Karashima , Eiji Matsumoto
发明人： Shoji IKUHARA , Daisuke Shiraishi , Hideyuki Yamamoto , Akira Kagoshima , Hiromichi Enami , Yosuke Karashima , Eiji Matsumoto
IPC分类号： H01L21/306
CPC分类号： H01L21/67069 , H01J37/32935 , H01L21/67253
摘要： A plasma processing apparatus includes a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device, a mass flow controller, a stage electrode receiving a workpiece, a high-frequency electrical source to, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters.
摘要翻译： 等离子体处理装置包括等离子体处理主框架和控制等离子体处理主框架的装置控制器。 等离子体处理主框架具有真空处理室，排气装置，质量流量控制器，接收工件的阶段电极，高频电源和将工件放置在平台电极上的传送装置， 加工工件。 设备控制器按照预定的步骤控制等离子体处理主框架，并且设置有诊断装置，该诊断装置获取用于处理在室中携带的工件的多个配方和等离子体处理装置的装置参数，当上述特定配方 执行配方，由此基于所获取的装置参数来诊断等离子体处理主框架的状态。
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公开(公告)号：US20090211706A1
公开(公告)日：2009-08-27
申请号：US12189883
申请日：2008-08-12
IPC分类号： C23F1/00
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etching apparatus that introduces a processing gas into a vacuum chamber, produces plasma by feeding high-frequency energy to a introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the chamber includes: a step of sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and a step of computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step. An endpoint of etching processing is determined based in the distances in the time-base direction obtained at the second step.
摘要翻译： 精确地检测在蚀刻终点附近发生的发光强度的微观变化，从而快速确定蚀刻的终点。 一种蚀刻终点确定方法，用于确定将处理气体引入真空室的等离子体蚀刻装置中的蚀刻处理的终点，通过向引入的处理气体供给高频能量来产生等离子体，并使用所产生的等离子体进行等离子体处理 在存储在所述室中的工件上包括：对由所述真空室中产生的等离子体发射的光进行预设波长的光的采样的步骤，获取特定波长的采样光的发光强度作为时序数据， 并基于获取的时间序列数据计算回归线; 以及在第一步骤获得的回归线和时间序列数据之间计算时基方向上的距离的步骤。 基于在第二步骤获得的时基方向上的距离来确定蚀刻处理的终点。
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公开(公告)号：US06908529B2
公开(公告)日：2005-06-21
申请号：US10087771
申请日：2002-03-05
CPC分类号： H01L21/67253 , H01J37/32935 , H01J37/32972 , H01L21/67069
摘要： A plasma processing system for processing a workpiece by using plasma generated in a chamber, includes a light transmissive member disposed in the chamber, the workpiece being disposed inside the light transmissive member; and a light receiving unit mounted on the chamber for receiving light inside the light transmissive member, wherein a state of processing the workpiece is detected by using data detected from light inside the light transmissive member before processing the workpiece and data detected from light inside the light transmissive member generated during processing the workpiece. A plasma processing method and system is provided which facilitates an operation of the system and executes a reliable processing.
摘要翻译： 一种用于通过使用在室中产生的等离子体处理工件的等离子体处理系统，包括设置在所述室中的透光构件，所述工件设置在所述透光构件内部; 以及安装在所述室上的受光单元，用于在所述透光构件内部接收光，其中，在处理所述工件之前，通过使用从所述透光构件内的光检测到的数据来检测所述工件的处理状态和从所述光内的光检测的数据 在处理工件期间产生的透射构件。 提供了一种等离子体处理方法和系统，其有助于系统的操作并执行可靠的处理。
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10.发明授权公开(公告)号：US06616759B2
公开(公告)日：2003-09-09
申请号：US09946732
申请日：2001-09-06
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamato , Shoji Ikuhara , Toshio Masuda
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Akira Kagoshima , Daisuke Shiraishi , Hideyuki Yamamato , Shoji Ikuhara , Toshio Masuda
IPC分类号： B05C1302
CPC分类号： H01L22/20 , G05B13/048 , G05B19/41865 , G05B23/024 , G05B2219/31357 , G05B2219/32058 , H01L21/67276 , H01L2924/0002 , Y02P90/12 , Y02P90/14 , Y02P90/18 , Y02P90/20 , H01L2924/00
摘要： A method and system are provided for controlling and/or monitoring a semiconductor processing apparatus while predicting its processing results. The system includes a sensor for monitoring a processing state of the processing apparatus, a sensed data storage unit for preserving sensed data sent from the sensor, an input device for inputting measured values for processing results of semiconductor devices processed by the processing apparatus, a processing result measured value storage unit for preserving the inputted processing result measured values, a model equation generation unit for generating a model equation from preserved sensed data and processing result measured values, a model equation storage unit for preserving the generated model equation, a model equation based prediction unit for predicting processing results from the preserved model equation and the sensed data, and a process recipe control unit for controlling processing conditions of the processing apparatus from predicted processing results.
摘要翻译： 提供一种用于在预测其处理结果的同时控制和/或监视半导体处理装置的方法和系统。 该系统包括用于监视处理装置的处理状态的传感器，用于保存从传感器发送的感测数据的感测数据存储单元，用于输入用于处理由处理装置处理的半导体装置的处理结果的测量值的输入装置， 结果测量值存储单元，用于保存输入的处理结果测量值;模型方程生成单元，用于从保存的感测数据和处理结果测量值生成模型方程;模型方程式存储单元，用于保存生成的模型方程;基于模型方程 预测单元，用于从保存的模型方程和感测数据预测处理结果;以及处理配方控制单元，用于根据预测的处理结果控制处理装置的处理条件。
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