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公开(公告)号：US08282849B2
公开(公告)日：2012-10-09
申请号：US12385273
申请日：2009-04-03
IPC分类号： G01L21/30
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译： 一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。 通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。
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公开(公告)号：US20110003413A1
公开(公告)日：2011-01-06
申请号：US12766684
申请日：2010-04-23
IPC分类号： H01L21/20
CPC分类号： C23C16/56 , H01L21/02395 , H01L21/02543 , H01L33/007 , H01L33/46
摘要： In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.
摘要翻译： 在半导体光子器件衬底的制造方法中，在不同材料组成的多层膜在一个室中连续逐渐晶体生长的情况下，定义表示各层之间的生长速度关系的层间生长速率模型， 通过使用单个基板的实际晶体生长获得对应于至少一个或多个层的膜的生长速率，通过层间生长速率模型从获得的生长速率估计与其它层相对应的膜的生长速率 根据实际获得的生长速度和估计的生长速度，根据半导体光子器件基板的各层的膜厚确定生长时间。 这些步骤通过使用连接到MOCVD设备的计算机系统进行，然后执行半导体光子器件衬底的晶体生长。
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公开(公告)号：US20090253222A1
公开(公告)日：2009-10-08
申请号：US12385273
申请日：2009-04-03
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译： 一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。 通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。
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公开(公告)号：US20090171638A1
公开(公告)日：2009-07-02
申请号：US12006411
申请日：2007-12-31
CPC分类号： G05B13/041
摘要： An advanced process control (APC) system. The APC system comprises a database for receiving process data from a measurement tool for a plurality of process runs and for storing the process data. A lambda tuner determines a tuned-lambda value corresponding to a process-capability-index value based on upper and lower process control limits and statistics derived from the process data. A process-run controller updates a recipe value based on the received process data and the tuned-lambda value.
摘要翻译： 先进的过程控制（APC）系统。 APC系统包括用于从用于多个处理运行的测量工具接收处理数据并用于存储过程数据的数据库。 lambda调谐器基于上下过程控制限制和从过程数据导出的统计信息来确定对应于过程能力指数值的调整lambda值。 过程运行控制器基于接收到的过程数据和调整的lambda值来更新配方值。
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公开(公告)号：US20050245169A1
公开(公告)日：2005-11-03
申请号：US11117294
申请日：2005-04-29
IPC分类号： B24B37/04 , H01L21/304 , B24B49/00
CPC分类号： B24B49/00 , B24B37/042
摘要： In a wafer polishing method, a within-wafer distribution model of a removal rate and a within-wafer distribution model of a polishing process are selected, and a within-wafer distribution of a removal rate is obtained by determining parameters of a within-wafer distribution model of a removal rate based on the within-wafer distribution of the film thickness before/after CMP, polishing condition data, and the selected within-wafer distribution model of the polishing process of the polished wafer. Then, a film thickness in the polishing process is estimated from passage of time based on the obtained within-wafer distribution of the removal rate, the selected within-wafer distribution model of the polishing process, and the film thickness before CMP of the wafer to be processed, thereby determining the polishing conditions with a restriction that the film thickness at each position in the within-wafer distribution of the film thickness after CMP satisfies the control limit.
摘要翻译： 在晶片抛光方法中，选择抛光过程的晶片内分布模型和晶片内分布模型，并通过确定晶片内部的参数来获得去除速率的晶片内分布 基于在CMP之前/之后的膜厚度的晶片内分布，抛光条件数据以及抛光晶片的抛光工艺的所选择的晶片内分布模型中的去除速率的分布模型。 然后，基于所获得的去除速度的晶片内分布，所选择的抛光工艺的晶片内分布模型以及晶片CMP之前的膜厚度，估计晶片的研磨过程中的膜厚度。 进行处理，由此确定抛光条件，限制了CMP之后的膜厚分布内的各位置的膜厚满足控制极限。
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6.发明授权Etching apparatus, analysis apparatus, etching treatment method, and etching treatment program 有权蚀刻装置，分析装置，蚀刻处理方法和蚀刻处理程序公开(公告)号：US08486290B2
公开(公告)日：2013-07-16
申请号：US13144097
申请日：2009-11-20
IPC分类号： G01R31/00
CPC分类号： G01N21/68 , H01J37/32935 , H01J37/32972 , H05H1/0037
摘要： There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching. The etching apparatus includes: a lot/wafer/step-depending OES-data searching/acquiring function 511 for acquiring a plurality of optical emission intensity waveforms along an etching-treatment time axis; a waveform-change-existence judgment function 521 for judging the existence of the change of the plurality of light emission intensity waveforms; a waveform-correlation-matrix calculating function 522 for calculating a correlation matrix between the optical emission intensity waveforms; a waveform classifying function 523 for classifying the optical emission intensity waveforms into groups; and a representative-waveform selecting function 524 for selecting a representative optical emission intensity waveform from the group.
摘要翻译： 提供了一种蚀刻装置，其中，在不设置物质的信息和化学反应的情况下，可以从大量波长的波形中选择少数代表性波长，并且需要大量人物的蚀刻数据的分析处理 - 可以消除小时以有效地设置蚀刻的监测。 蚀刻装置包括：许多/晶片/逐步依赖的OES数据搜索/获取功能511，用于获取沿蚀刻处理时间轴的多个发光强度波形; 用于判断多个发光强度波形的变化的存在的波形变化存在判断功能521; 用于计算光发射强度波形之间的相关矩阵的波形相关矩阵计算功能522; 波形分类功能523，用于将光发射强度波形分组成组; 以及用于从该组中选择代表性的光发射强度波形的代表波形选择功能524。
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公开(公告)号：US20130173042A1
公开(公告)日：2013-07-04
申请号：US13612937
申请日：2012-09-13
IPC分类号： G05B19/18
CPC分类号： G05B19/4184 , G05B2219/32191 , G05B2219/45031 , Y02P90/14 , Y02P90/22
摘要： Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio.
摘要翻译： 半导体制造设备包括：控制半导体制造设备的各个部分的驱动和处理的控制器，以及监测半导体制造设备中的每个物理量的传感器或每个化学响应量的状态; 数据库 以及算术部，其执行：读出设备数据，基于要比较的多条信号数据计算时间点之间的相关矩阵，从所述相关矩阵计算特征值和特征向量，以及通过 主成分分析; 对主成分的特征值的大小进行比较处理，按照降序排列本征值，显示其列表; 以及处理显示散射图，其中各个信号的主分量分数被绘制在选择与具有贡献率的本征值相对应的主分量的特征空间中。
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8.发明申请ETCHING APPARATUS, CONTROL SIMULATOR,AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权蚀刻设备，控制模拟器和半导体器件制造方法公开(公告)号：US20120310403A1
公开(公告)日：2012-12-06
申请号：US13514708
申请日：2010-12-03
IPC分类号： G05B19/18
CPC分类号： H01J37/32972 , H01J37/32935
摘要： Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ΔX as an input and ΔY as an output. In etching process control, ΔX (manipulated volume) is calculated from ΔY (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.
摘要翻译： 基于用于确定来自蚀刻装置的致动器值X的波长的光发射强度值Y的模型，从Y计算X以实现对Y的优选的运行到运行控制.X和Y之间的关系被定义为对照 基于具有＆Dgr; X作为输入的代数表达式的模型（矩阵模型C1，比率约束模型C2）和＆Dgr; Y作为输出。 在蚀刻过程控制中，使用基于非控制光发射强度值Y的控制模型从＆Dgr; Y（受控体积）计算＆Dgr; X（操纵体积）以设定用于蚀刻工艺的X（S1） 在此期间Y被监控。 基于Y的实际值，计算在下一个晶片蚀刻工艺中使用的非控制光发射强度值Y.
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9.发明申请ETCHING APPARATUS, ANALYSIS APPARATUS, ETCHING TREATMENT METHOD, AND ETCHING TREATMENT PROGRAM 有权蚀刻装置，分析装置，蚀刻处理方法和蚀刻处理程序公开(公告)号：US20110315661A1
公开(公告)日：2011-12-29
申请号：US13144097
申请日：2009-11-20
CPC分类号： G01N21/68 , H01J37/32935 , H01J37/32972 , H05H1/0037
摘要： There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching. The etching apparatus includes: a lot/wafer/step-depending OES-data searching/acquiring function 511 for acquiring a plurality of optical emission intensity waveforms along an etching-treatment time axis; a waveform-change-existence judgment function 521 for judging the existence of the change of the plurality of light emission intensity waveforms; a waveform-correlation-matrix calculating function 522 for calculating a correlation matrix between the optical emission intensity waveforms; a waveform classifying function 523 for classifying the optical emission intensity waveforms into groups; and a representative-waveform selecting function 524 for selecting a representative optical emission intensity waveform from the group.
摘要翻译： 提供了一种蚀刻装置，其中，在不设置物质的信息和化学反应的情况下，可以从大量波长的波形中选择少数代表性波长，并且需要大量人物的蚀刻数据的分析处理 - 可以消除小时以有效地设置蚀刻的监测。 蚀刻装置包括：许多/晶片/逐步依赖的OES数据搜索/获取功能511，用于获取沿蚀刻处理时间轴的多个发光强度波形; 用于判断多个发光强度波形的变化的存在的波形变化存在判断功能521; 用于计算光发射强度波形之间的相关矩阵的波形相关矩阵计算功能522; 波长分类功能523，用于将光发射强度波形分组成组; 以及用于从组中选择代表性的光发射强度波形的代表波形选择功能524。
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公开(公告)号：US09110461B2
公开(公告)日：2015-08-18
申请号：US13612937
申请日：2012-09-13
IPC分类号： G05B19/18 , G05B19/418
CPC分类号： G05B19/4184 , G05B2219/32191 , G05B2219/45031 , Y02P90/14 , Y02P90/22
摘要： Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio.
摘要翻译： 半导体制造设备包括：控制半导体制造设备的各个部分的驱动和处理的控制器，以及监测半导体制造设备中的每个物理量的传感器或每个化学响应量的状态; 数据库 以及算术部，其执行：读出设备数据，基于要比较的多条信号数据计算时间点之间的相关矩阵，从所述相关矩阵计算特征值和特征向量，以及通过 主成分分析; 对主成分的特征值的大小进行比较处理，按照降序排列本征值，显示其列表; 以及处理显示散射图，其中各个信号的主分量分数被绘制在选择与具有贡献率的本征值相对应的主分量的特征空间中。
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