Invention Grant
- Patent Title: Diode memory
- Patent Title (中): 二极管记忆
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Application No.: US12904792Application Date: 2010-10-14
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Publication No.: US08284597B2Publication Date: 2012-10-09
- Inventor: Kuo-Pin Chang , Hang-Ting Lue
- Applicant: Kuo-Pin Chang , Hang-Ting Lue
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: G11C11/36
- IPC: G11C11/36
Abstract:
A diode memory device has an intermediate structure between the two terminals, such as a p terminal and the n terminal.
Public/Granted literature
- US20110273930A1 Diode Memory Public/Granted day:2011-11-10
Information query
