发明授权
- 专利标题： Resist lower layer film-formed substrate
- 专利标题（中）： 抗下层成膜基材
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申请号： US12071806申请日： 2008-02-26
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公开(公告)号： US08288072B2公开(公告)日： 2012-10-16
- 发明人: Jun Hatakeyama , Kazumi Noda , Seiichiro Tachibana , Takeshi Kinsho , Tsutomu Ogihara
- 申请人： Jun Hatakeyama , Kazumi Noda , Seiichiro Tachibana , Takeshi Kinsho , Tsutomu Ogihara
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2007-63935 20070313
- 主分类号： G03F7/004
- IPC分类号： G03F7/004
摘要：
A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).
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