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公开(公告)号：US20080220381A1
公开(公告)日：2008-09-11
申请号：US12071804
申请日：2008-02-26
CPC分类号： G03F7/091
摘要： An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided.The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种防反射膜组合物，其中蚀刻速度快，因此，当用作抗蚀剂下层时，抗蚀剂图案的膜损失和蚀刻期间图案的变形可以最小化，并且由于交联密度高，致密的 可以在热交联后形成膜，因此可以防止与上层抗蚀剂的混合，显影后的抗蚀剂图案良好。 该防反射膜组合物包含： 至少一种具有由以下通式（1）表示的重复单元的聚合物。
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公开(公告)号：US07687228B2
公开(公告)日：2010-03-30
申请号：US12071804
申请日：2008-02-26
IPC分类号： G03F7/11 , H01L21/027 , G03F7/40 , C08F20/24
CPC分类号： G03F7/091
摘要： An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided. The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (I).
摘要翻译： 一种防反射膜组合物，其中蚀刻速度快，因此，当用作抗蚀剂下层时，抗蚀剂图案的膜损失和蚀刻期间图案的变形可以最小化，并且由于交联密度高，致密的 可以在热交联后形成膜，因此可以防止与上层抗蚀剂的混合，显影后的抗蚀剂图案良好。 该防反射膜组合物包含： 至少一种具有由以下通式（I）表示的重复单元的聚合物。
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公开(公告)号：US08288072B2
公开(公告)日：2012-10-16
申请号：US12071806
申请日：2008-02-26
IPC分类号： G03F7/004
CPC分类号： G03F7/091 , G03F7/0046
摘要： A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种抗蚀剂下层膜组合物，其中蚀刻速度快，因此可以缩短蚀刻时间周期，以最小化抗蚀剂图案的膜厚度损失和蚀刻期间图案的变形，因此，图案可以高转印 可以在基板上形成精度和极好的图案。 所述抗蚀剂下层膜组合物至少含有具有下述通式（1）表示的重复单元的聚合物。
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4.发明申请公开(公告)号：US20080227037A1
公开(公告)日：2008-09-18
申请号：US12071806
申请日：2008-02-26
CPC分类号： G03F7/091 , G03F7/0046
摘要： A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种抗蚀剂下层膜组合物，其中蚀刻速度快，因此可以缩短蚀刻时间周期，以最小化抗蚀剂图案的膜厚度损失和蚀刻期间图案的变形，因此，图案可以高转印 可以在基板上形成精度和极好的图案。 所述抗蚀剂下层膜组合物至少含有具有下述通式（1）表示的重复单元的聚合物。
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5.发明授权Antireflective coating composition, antireflective coating, and patterning process 有权抗反射涂料组合物，抗反射涂层和图案化工艺公开(公告)号：US07879530B2
公开(公告)日：2011-02-01
申请号：US12239641
申请日：2008-09-26
CPC分类号： G03F7/091 , C08L33/16 , C09D125/18 , C09D133/16 , Y10S438/952 , C08L2666/04 , C08L2666/02
摘要： A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 一种组合物，其包含（A）具有在α-和α'-位取代的具有多个氟原子并具有k = 0.01-0.4的醇结构的聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物 以形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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6.发明申请ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS 有权抗反射涂层组合物，抗反射涂层和图案处理公开(公告)号：US20090087799A1
公开(公告)日：2009-04-02
申请号：US12239641
申请日：2008-09-26
CPC分类号： G03F7/091 , C08L33/16 , C09D125/18 , C09D133/16 , Y10S438/952 , C08L2666/04 , C08L2666/02
摘要： A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 一种组合物，其包含（A）具有在α和α'位置被取代并具有k = 0.01-0.4的多个氟原子的醇结构的聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物 以形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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7.发明授权Antireflective coating composition, antireflective coating, and patterning process 有权抗反射涂料组合物，抗反射涂层和图案化工艺公开(公告)号：US08313890B2
公开(公告)日：2012-11-20
申请号：US12636546
申请日：2009-12-11
CPC分类号： G03F7/091 , C09D133/16 , C08L2666/02
摘要： A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 包含（A）具有k = 0.01-0.4和n = 1.4-2.1的氟化聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物的组合物用于形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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8.发明申请ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING , AND PATTERNING PROCESS 有权抗反射涂层组合物，抗反射涂层和图案处理公开(公告)号：US20100151381A1
公开(公告)日：2010-06-17
申请号：US12636546
申请日：2009-12-11
CPC分类号： G03F7/091 , C09D133/16 , C08L2666/02
摘要： A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 包含（A）具有k = 0.01-0.4和n = 1.4-2.1的氟化聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物的组合物用于形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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9.发明申请POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权可聚合的含硫酸钠和聚合物，耐腐蚀组合物和方法公开(公告)号：US20100055608A1
公开(公告)日：2010-03-04
申请号：US12549191
申请日：2009-08-27
IPC分类号： G03F7/20 , C07C309/22 , C08F228/02 , C08F18/00 , G03F7/004
CPC分类号： C08F28/02 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/08 , C07D493/18 , C08F20/22 , C08F20/36 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C10 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译： 提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是C1-C10有机基团，n是0或1.锍盐在暴露于高能量辐射时产生非常强的磺酸。 还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。
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10.发明授权公开(公告)号：US06962767B2
公开(公告)日：2005-11-08
申请号：US10315069
申请日：2002-12-10
申请人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： G03F7/039 , C07D317/12 , C07D317/20 , C07D317/24 , C07D319/06 , C08F32/00 , C08F220/10 , C08F222/06 , C08F222/10 , C08G61/02 , C08G61/08 , G03C5/00
CPC分类号： C08G61/08 , C08G61/02 , Y10S430/106 , Y10S430/111
摘要： Acetal compounds in which a 5- or 6-membered ring acetal structure is connected to a norbornene structure through a linker represented by —(CH2)m— in which one hydrogen atom may be substituted with a hydroxyl or acetoxy group, and m is from 1 to 8 are novel. Using the acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.
摘要翻译： 其中5或6元环缩醛结构通过 - （CH 2 CH 2）m - 表示的连接体与降冰片烯结构连接的缩醛化合物，其中一个氢 原子可以被羟基或乙酰氧基取代，m为1至8的是新的。 使用缩醛化合物作为单体，得到聚合物。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，并且具有优异的灵敏度，分辨率和耐蚀刻性。
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