发明授权
- 专利标题： Stressor in planar field effect transistor device
- 专利标题（中）： 应力平面场效应晶体管器件
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申请号： US12945026申请日： 2010-11-12
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公开(公告)号： US08288217B2公开(公告)日： 2012-10-16
- 发明人: Dechao Guo , Pranita Kulkarni , Philip J. Oldiges , Alexander Reznicek , Keith Kwong Hon Wong
- 申请人： Dechao Guo , Pranita Kulkarni , Philip J. Oldiges , Alexander Reznicek , Keith Kwong Hon Wong
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
A field effect transistor device includes a gate stack portion disposed on a substrate, and a channel region in the substrate having a depth partially defined by the gate stack portion and a silicon region of the substrate, the silicon region having a sloped profile such that a distal regions of the channel region have greater depth than a medial region of the channel region.
公开/授权文献
- US20120119266A1 Stressor in Planar Field Effect Transistor Device 公开/授权日：2012-05-17