Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12850903Application Date: 2010-08-05
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Publication No.: US08288263B2Publication Date: 2012-10-16
- Inventor: Gyu-Hyun Kim , Kwon Hong , Cha-Deok Dong
- Applicant: Gyu-Hyun Kim , Kwon Hong , Cha-Deok Dong
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0040922 20100430
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A method for fabricating a semiconductor device includes forming a multilayer, forming a plurality of patterns by etching the multilayer and a portion of the substrate, forming a supporter to support the plurality of patterns, and removing residues formed during the etching.
Public/Granted literature
- US20110269304A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2011-11-03
Information query
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