发明授权
- 专利标题: Process excursion detection
- 专利标题(中): 过程偏移检测
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申请号: US13024471申请日: 2011-02-10
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公开(公告)号: US08289510B2公开(公告)日: 2012-10-16
- 发明人: Patrick Y. Huet , Robinson Piramuthu , Martin Plihal , Christopher W. Lee , Cho H. Teh , Yan Xiong
- 申请人: Patrick Y. Huet , Robinson Piramuthu , Martin Plihal , Christopher W. Lee , Cho H. Teh , Yan Xiong
- 申请人地址: US CA Milpitas
- 专利权人: KLA-Tencor Corporation
- 当前专利权人: KLA-Tencor Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Luedeka Neely Group, P.C.
- 主分类号: G01N21/00
- IPC分类号: G01N21/00
摘要:
A method for analyzing defect information on a substrate, including logically dividing the substrate into zones, and detecting defects on the substrate to produce the defect information. The defect information from the substrate is analyzed on a zone by zone basis to produce defect level classifications for the defects within each zone. The zonal defect level classifications are analyzed according to at least one analysis method. The defect level classifications are preferably selected from a group of defect level classifications that is specified by a recipe. Preferably, the at least one analysis method includes at least one of zonal defect distribution, automatic defect classification, spatial signature analysis, and excursion detection. The defect level classifications preferably include at least one of individual defect, defect cluster, and spatial signature analysis signature. In one embodiment the defect information is logically divided into configurable zones after the defects on the substrate have been detected.
公开/授权文献
- US20110137576A1 Process Excursion Detection 公开/授权日:2011-06-09
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