发明授权
- 专利标题: Semiconductor light-emitting device
- 专利标题(中): 半导体发光装置
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申请号: US11668218申请日: 2007-01-29
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公开(公告)号: US08294165B2公开(公告)日: 2012-10-23
- 发明人: Yasushi Hattori , Shinya Nunoue , Genichi Hatakoshi , Shinji Saito , Naomi Shida , Masahiro Yamamoto
- 申请人: Yasushi Hattori , Shinya Nunoue , Genichi Hatakoshi , Shinji Saito , Naomi Shida , Masahiro Yamamoto
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-094875 20060330
- 主分类号: H01L33/50
- IPC分类号: H01L33/50 ; H01L33/54 ; H01L33/56
摘要:
A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.
公开/授权文献
- US20070228390A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 公开/授权日:2007-10-04
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