发明授权
- 专利标题： Electrode structure, semiconductor element, and methods of manufacturing the same
- 专利标题（中）： 电极结构，半导体元件及其制造方法
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申请号： US13269153申请日： 2011-10-07
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公开(公告)号： US08304335B2公开(公告)日： 2012-11-06
- 发明人: Shigeru Koumoto , Tatsuya Sasaki , Kazuhiro Shiba , Masayoshi Sumino
- 申请人： Shigeru Koumoto , Tatsuya Sasaki , Kazuhiro Shiba , Masayoshi Sumino
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2006-354091 20061228
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.