公开(公告)号：US08304335B2

公开(公告)日：2012-11-06

申请号：US13269153

申请日：2011-10-07

申请人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

发明人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

IPC分类号： H01L21/28

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/32341

摘要： According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

摘要翻译： 根据本发明，提供了一种电极结构，其包括：氮化物半导体层; 设置在氮化物半导体层上的电极; 以及设置在所述电极上的电极保护膜，其中所述氮化物半导体层包含含有Nb，Hf或Zr作为构成元素的金属氮化物，所述电极具有含有作为其中形成的构成元素的Ti或V的金属氧化物的部分， 并且所述电极保护膜覆盖所述电极的至少一部分，并且包含具有Au或Pt作为构成要素的保护层。

公开(公告)号：US08169078B2

公开(公告)日：2012-05-01

申请号：US12519698

申请日：2007-12-11

申请人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

发明人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

IPC分类号： H01L23/48

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/32341

摘要： According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

公开(公告)号：US20100200863A1

公开(公告)日：2010-08-12

申请号：US11917124

申请日：2006-07-06

申请人： Tatsuya Sasaki ,  Kazuhiro Shiba ,  Shigeru Koumoto ,  Masayoshi Sumino

发明人： Tatsuya Sasaki ,  Kazuhiro Shiba ,  Shigeru Koumoto ,  Masayoshi Sumino

IPC分类号： H01L29/40 ,  H01L21/20 ,  H01L21/28

CPC分类号： H01S5/32341 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22

摘要： A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element, and a third layer containing Au as a constituent element are formed on a GaN substrate 11. Thereafter, the GaN substrate 11 and the first to third layers are kept at 700° C. or higher and at 1300° C. or lower. This allows a metal oxide of Ti to be distributed to extend from the interface between the GaN substrate 11 and the electrode 14 over to the inside of the electrode 14. Further, a metal nitride of Nb is formed in the inside of the GaN substrate 11. The metal nitride of Nb will be distributed to extend from the inside of the electrode 14 over to the inside of the GaN substrate 11.

摘要翻译： 在GaN衬底11上形成包含Ti作为构成元素的第一层，含有Nb作为构成元素的第二层和含有Au作为构成元素的第三层。此后，GaN衬底11和第一至第三层 保持在700℃以上且1300℃以下。 这允许Ti的金属氧化物从GaN衬底11和电极14之间的界面延伸到电极14的内部。此外，在GaN衬底11的内部形成Nb的金属氮化物 Nb的金属氮化物将从电极14的内部扩散到GaN衬底11的内部。

公开(公告)号：US20100032839A1

公开(公告)日：2010-02-11

申请号：US12519698

申请日：2007-12-11

申请人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

发明人： Shigeru Koumoto ,  Tatsuya Sasaki ,  Kazuhiro Shiba ,  Masayoshi Sumino

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/32341

摘要： According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Hb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.

摘要翻译： 根据本发明，提供了一种电极结构，其包括：氮化物半导体层; 设置在氮化物半导体层上的电极; 以及设置在所述电极上的电极保护膜，其中所述氮化物半导体层包含含有Hb，Hf或Zr作为构成元素的金属氮化物，所述电极具有含有作为其中形成的构成元素的Ti或V的金属氧化物的部分， 并且所述电极保护膜覆盖所述电极的至少一部分，并且包含具有Au或Pt作为构成要素的保护层。