发明授权
- 专利标题: Metallized substrate and method for producing the same
- 专利标题(中): 金属化基板及其制造方法
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申请号: US12602828申请日: 2008-06-10
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公开(公告)号: US08309164B2公开(公告)日: 2012-11-13
- 发明人: Tetsuo Imai , Osamu Yatabe , Masakatsu Maeda
- 申请人: Tetsuo Imai , Osamu Yatabe , Masakatsu Maeda
- 申请人地址: JP Yamaguchi
- 专利权人: Tokuyama Corporation
- 当前专利权人: Tokuyama Corporation
- 当前专利权人地址: JP Yamaguchi
- 代理机构: Ladas & Parry LLP
- 优先权: JP2007-155706 20070612
- 国际申请: PCT/JP2008/060615 WO 20080610
- 国际公布: WO2008/153026 WO 20081218
- 主分类号: B05D3/10
- IPC分类号: B05D3/10 ; B05D5/12 ; B05D5/00
摘要:
A metallized substrate having, disposed in the order mentioned: a ceramics substrate; a high-melting point metal layer; a base nickel plating layer; a layered nickel-phosphorous plating layer; a diffusion-inhibiting plating layer; and a gold plating layer. The base nickel plating layer being any one of a nickel plating layer, a nickel-boron plating layer, or a nickel-cobalt plating layer. The diffusion-inhibiting plating layer being any one of a columnar nickel-phosphorous plating layer, a palladium-phosphorous plating layer, or a palladium plating layer. According to the above composition, even after heating the semiconductor chips in a mounted state, the metallized substrate can make the connection strength of wire bonding favorable.
公开/授权文献
- US20100183898A1 METALLIZED SUBSTRATE AND METHOD FOR PRODUCING THE SAME 公开/授权日:2010-07-22
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