发明授权
- 专利标题: Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
- 专利标题(中): 成膜装置,成膜方法,制造装置以及发光装置的制造方法
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申请号: US11949217申请日: 2007-12-03
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公开(公告)号: US08313603B2公开(公告)日: 2012-11-20
- 发明人: Hisao Ikeda , Tomoya Aoyama , Takahiro Ibe , Yoshiharu Hirakata , Shunpei Yamazaki
- 申请人: Hisao Ikeda , Tomoya Aoyama , Takahiro Ibe , Yoshiharu Hirakata , Shunpei Yamazaki
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2006-328472 20061205
- 主分类号: C23C14/04
- IPC分类号: C23C14/04 ; C23C14/08
摘要:
An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat.
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