发明授权
- 专利标题： MIM capacitors in semiconductor components
- 专利标题（中）： MIM电容器在半导体元件
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申请号： US13334768申请日： 2011-12-22
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公开(公告)号： US08314452B2公开(公告)日： 2012-11-20
- 发明人: Philipp Riess , Armin Fischer
- 申请人： Philipp Riess , Armin Fischer
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second dielectric material is disposed between a second portion of the first metal structure and a second portion of the second metal structure. No first dielectric material is disposed between the second portion of the first and second metal structures, and no second dielectric material is disposed between the first portion of the first and second metal structures. The first and second dielectric material layers include materials with opposite coefficient of capacitance.
公开/授权文献
- US20120091560A1 MIM Capacitors in Semiconductor Components 公开/授权日：2012-04-19
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