公开(公告)号：US20120091560A1

公开(公告)日：2012-04-19

申请号：US13334768

申请日：2011-12-22

申请人： Philipp Riess ,  Armin Fischer

发明人： Philipp Riess ,  Armin Fischer

IPC分类号： H01L29/92 ,  H01G4/018

CPC分类号： H01L23/5223 ,  H01L2924/0002 ,  Y10T29/43 ,  H01L2924/00

摘要： Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second dielectric material is disposed between a second portion of the first metal structure and a second portion of the second metal structure. No first dielectric material is disposed between the second portion of the first and second metal structures, and no second dielectric material is disposed between the first portion of the first and second metal structures. The first and second dielectric material layers include materials with opposite coefficient of capacitance.

摘要翻译： 公开了形成理想MIM电容器的结构和方法。 单个电容器包括覆盖衬底的第一和第二金属结构，设置在第一金属结构的第一部分和第二金属结构的第一部分之间的第一介电材料。 第二介电材料设置在第一金属结构的第二部分和第二金属结构的第二部分之间。 在第一和第二金属结构的第二部分之间没有设置第一介电材料，并且在第一和第二金属结构的第一部分之间没有设置第二介电材料。 第一和第二介电材料层包括具有相反的电容系数的材料。

公开(公告)号：US08101495B2

公开(公告)日：2012-01-24

申请号：US12048060

申请日：2008-03-13

申请人： Philipp Riess ,  Armin Fischer

发明人： Philipp Riess ,  Armin Fischer

IPC分类号： H01L21/8242

CPC分类号： H01L23/5223 ,  H01L2924/0002 ,  Y10T29/43 ,  H01L2924/00

摘要： Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second dielectric material is disposed between a second portion of the first metal structure and a second portion of the second metal structure. No first dielectric material is disposed between the second portion of the first and second metal structures, and no second dielectric material is disposed between the first portion of the first and second metal structures. The first and second dielectric material layers include materials with opposite coefficient of capacitance.

公开(公告)号：US20090230507A1

公开(公告)日：2009-09-17

申请号：US12048060

申请日：2008-03-13

申请人： Philipp Riess ,  Armin Fischer

发明人： Philipp Riess ,  Armin Fischer

IPC分类号： H01L29/92 ,  H01G4/018 ,  H01L21/02

CPC分类号： H01L23/5223 ,  H01L2924/0002 ,  Y10T29/43 ,  H01L2924/00

摘要： Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second dielectric material is disposed between a second portion of the first metal structure and a second portion of the second metal structure. No first dielectric material is disposed between the second portion of the first and second metal structures, and no second dielectric material is disposed between the first portion of the first and second metal structures. The first and second dielectric material layers include materials with opposite coefficient of capacitance.

摘要翻译： 公开了形成理想MIM电容器的结构和方法。 单个电容器包括覆盖衬底的第一和第二金属结构，设置在第一金属结构的第一部分和第二金属结构的第一部分之间的第一介电材料。 第二介电材料设置在第一金属结构的第二部分和第二金属结构的第二部分之间。 在第一和第二金属结构的第二部分之间没有设置第一介电材料，并且在第一和第二金属结构的第一部分之间没有设置第二介电材料。 第一和第二介电材料层包括具有相反的电容系数的材料。

公开(公告)号：US08314452B2

公开(公告)日：2012-11-20

申请号：US13334768

申请日：2011-12-22

申请人： Philipp Riess ,  Armin Fischer

发明人： Philipp Riess ,  Armin Fischer

IPC分类号： H01L21/8242

CPC分类号： H01L23/5223 ,  H01L2924/0002 ,  Y10T29/43 ,  H01L2924/00

摘要： Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second dielectric material is disposed between a second portion of the first metal structure and a second portion of the second metal structure. No first dielectric material is disposed between the second portion of the first and second metal structures, and no second dielectric material is disposed between the first portion of the first and second metal structures. The first and second dielectric material layers include materials with opposite coefficient of capacitance.

摘要翻译： 公开了形成理想MIM电容器的结构和方法。 单个电容器包括覆盖衬底的第一和第二金属结构，设置在第一金属结构的第一部分和第二金属结构的第一部分之间的第一介电材料。 第二介电材料设置在第一金属结构的第二部分和第二金属结构的第二部分之间。 在第一和第二金属结构的第二部分之间没有设置第一介电材料，并且在第一和第二金属结构的第一部分之间没有设置第二介电材料。 第一和第二介电材料层包括具有相反的电容系数的材料。

公开(公告)号：US08323991B2

公开(公告)日：2012-12-04

申请号：US12980829

申请日：2010-12-29

申请人： Armin Fischer ,  Alexander Von Glasow ,  Jochen Von Hagen

发明人： Armin Fischer ,  Alexander Von Glasow ,  Jochen Von Hagen

IPC分类号： G01R31/26 ,  G01R27/08

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device and method are provided for detecting stress migration properties of a semiconductor module mounted in a housing. A stress migration test (SMT) structure is formed in the semiconductor module. An integrated heating (IH) device is formed within or in direct proximity to the SMT structure. The SMT structure includes a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer. The IH device includes a heating interconnect region through which a heating current flows. The heating interconnect region is within or outside the first or second interconnect region or connecting region. When the heating current is applied, a measurement voltage is applied to the SMT structure, and a current through the SMT structure is measured to detect stress migration properties of the semiconductor module.

摘要翻译： 提供了一种用于检测安装在壳体中的半导体模块的应力迁移特性的装置和方法。 在半导体模块中形成应力迁移试验（SMT）结构。 集成加热（IH）装置形成在SMT结构内或者直接靠近SMT结构。 SMT结构包括第一互连层中的第一互连区域，第二互连层中的第二互连区域和通过第一绝缘层电连接互连区域的连接区域。 IH装置包括加热互连区域，加热电流流过该区域。 加热互连区域在第一或第二互连区域或连接区域内或之外。 当施加加热电流时，向SMT结构施加测量电压，并且测量通过SMT结构的电流以检测半导体模块的应力迁移特性。

公开(公告)号：US07859025B2

公开(公告)日：2010-12-28

申请号：US11951579

申请日：2007-12-06

申请人： Fen Chen ,  Armin Fischer

发明人： Fen Chen ,  Armin Fischer

IPC分类号： H01L45/00

CPC分类号： H01L45/00

摘要： A metal ion transistor and related methods are disclosed. In one embodiment, the metal ion transistor includes a cell positioned in at least one isolation layer, the cell including a metal ion doped low dielectric constant (low-k) dielectric material sealed from each adjacent isolation layer; a first electrode contacting the cell on a first side; a second electrode contacting the cell on a second side; and a third electrode contacting the cell on a third side, wherein each electrode is isolated from each other electrode.

摘要翻译： 公开了一种金属离子晶体管及相关方法。 在一个实施例中，金属离子晶体管包括位于至少一个隔离层中的电池，该电池包括从每个相邻隔离层密封的金属离子掺杂低介电常数（低k）电介质材料; 在第一侧上与第一电极接触的第一电极; 在第二侧接触所述电池的第二电极; 以及在第三侧与第一电极接触的第三电极，其中每个电极彼此隔离。

公开(公告)号：US5616966A

公开(公告)日：1997-04-01

申请号：US554821

申请日：1995-11-07

申请人： Armin Fischer ,  Stefan Haimerl ,  Manfred Glehr

发明人： Armin Fischer ,  Stefan Haimerl ,  Manfred Glehr

IPC分类号： G07C9/00 ,  E05B47/00

CPC分类号： G07C9/00309 ,  G07C2009/00777 ,  Y10S70/46

摘要： An anti-theft system for a motor vehicle includes a portable transponder carrying code information. A stationary transceiver has an oscillator and an oscillating circuit being excited to oscillate by the oscillator at an oscillation being modulated by the transponder in synchronism with the code information. A demodulator demodulates the modulated oscillation of the oscillating circuit. According to one embodiment, the code information is obtained from the demodulated oscillation by sampling the oscillation at least at one predetermined sampling time. An arithmetic unit compares the code information with command code information and transmits an enable signal to a security unit if a match occurs. The modulated oscillation being shifted by a predetermined phase angle is sampled once again if initially no code information is recognized from the demodulator. According to another embodiment, the modulated oscillation containing the code information is sampled at least at two predetermined times being phase-shifted from one another by a predetermined phase angle and the code information is obtained from voltage values detected at the sampling times. The arithmetic unit compares the code information with the command code information and transmits an enable signal to a security unit if a match occurs.

摘要翻译： 用于机动车辆的防盗系统包括携带代码信息的便携式转发器。 固定收发器具有振荡器，并且振荡电路被激励以由振荡器以与代码信息同步的由应答器调制的振荡来振荡。 解调器解调振荡电路的调制振荡。 根据一个实施例，通过至少在一个预定采样时间对振荡进行采样从解调振荡中获得码信息。 算术单元将代码信息与命令代码信息进行比较，并且如果匹配发生，则向安全单元发送使能信号。 如果最初没有从解调器识别出代码信息，则调制振荡被移位预定相位角再次被采样。 根据另一个实施例，包含码信息的调制振荡至少在两个预定时间采样，彼此相移一个预定的相位角，并且从采样时间检测的电压值获得码信息。 算术单元将代码信息与命令代码信息进行比较，并且如果匹配发生，则向安全单元发送使能信号。

公开(公告)号：US20110140236A1

公开(公告)日：2011-06-16

申请号：US13032248

申请日：2011-02-22

申请人： Armin Fischer ,  Alexander Von Glasow

发明人： Armin Fischer ,  Alexander Von Glasow

IPC分类号： H01L23/525

CPC分类号： H01L23/525 ,  H01L24/02 ,  H01L24/10 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14

摘要： A semiconductor device includes a semiconductor chip. External connection pads and further pads are disposed over a surface of the semiconductor chip. Selected ones of the further pads are electrically connected to one another so as to activate selected functions within the semiconductor chip.

摘要翻译： 半导体器件包括半导体芯片。 外部连接焊盘和另外的焊盘设置在半导体芯片的表面上。 所选择的另外的焊盘彼此电连接，以激活半导体芯片内的所选功能。

公开(公告)号：US07079375B2

公开(公告)日：2006-07-18

申请号：US10520742

申请日：2003-06-12

申请人： Armin Fischer ,  Franz Ungar

发明人： Armin Fischer ,  Franz Ungar

IPC分类号： H01G4/38

CPC分类号： H01L27/0805

摘要： A set of integrated capacitor arrangements is presented, each of which has a circuitry-effective main capacitor and a connectable correction capacitor. Each capacitor arrangement has an electrically conductive antifuse connection and antifuse interruption between the correction capacitor and the main capacitor, which are produced after the main capacitor has been formed. The connection and interruption enable the capacitance of the capacitor arrangement to be corrected.

公开(公告)号：US20050275103A1

公开(公告)日：2005-12-15

申请号：US10526881

申请日：2003-09-14

申请人： Armin Fischer ,  Alexander Von Glasow

发明人： Armin Fischer ,  Alexander Von Glasow

IPC分类号： G06F17/50 ,  H01L21/768 ,  H01L21/82 ,  H01L23/522 ,  H01L23/48

CPC分类号： H01L23/5226 ,  G06F17/5068 ,  H01L21/76841 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit arrangement having a metallization layer, an interconnect dielectric, electrically conductive interconnect intermediate material electrically conductive connecting sections, connecting section dielectric between the connecting sections and connecting section intermediate material. The metallization layer contains electrically conductive interconnects between which the interconnect dielectric is disposed. The electrically conductive interconnect intermediate material is arranged between a side area of an interconnect and the interconnect dielectric. The electrically conductive connecting sections in each case form a section of an electrically conductive connection to or from an interconnect and the connecting section dielectric is between the connecting sections. The connecting section intermediate material is arranged in each case between a connecting section and the connecting section dielectric and/or between a connecting section and an interconnect. The interconnect intermediate material and the connecting section intermediate material make contact with one another at at least one connection.

摘要翻译： 一种具有金属化层，互连电介质，导电互连中间材料导电连接部分，连接部分之间的连接部分电介质和连接部分中间材料的集成电路装置。 金属化层包含布置有互连电介质的导电互连。 导电互连中间材料布置在互连的侧面区域和互连电介质之间。 导电连接部分在每种情况下都形成与互连件相互导电连接的部分，并且连接部分电介质位于连接部分之间。 连接部分中间材料分别布置在连接部分和连接部分电介质之间和/或连接部分和互连件之间。 互连中间材料和连接部分中间材料在至少一个连接处彼此接触。