Invention Grant
US08315096B2 Method and apparatus to implement a reset function in a non-volatile static random access memory
有权
在非易失性静态随机存取存储器中实现复位功能的方法和装置
- Patent Title: Method and apparatus to implement a reset function in a non-volatile static random access memory
- Patent Title (中): 在非易失性静态随机存取存储器中实现复位功能的方法和装置
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Application No.: US13216546Application Date: 2011-08-24
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Publication No.: US08315096B2Publication Date: 2012-11-20
- Inventor: James D Allan , Jayant Ashokkumar
- Applicant: James D Allan , Jayant Ashokkumar
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C14/00
- IPC: G11C14/00

Abstract:
The state of a volatile memory cell is set by grounding a power supply to the volatile memory cell and driving a first bit line to the volatile memory cell to a first defined state. The first defined state of the first bit line is controllable independently of a defined state of a second bit line to the volatile memory cell. A word line of the volatile memory cell is driven to a word line state, and the power supply to the volatile memory cell is ungrounded.
Public/Granted literature
- US20120213027A1 METHOD AND APPARATUS TO IMPLEMENT A RESET FUNCTION IN A NON-VOLATILE STATIC RANDOM ACCESS MEMORY Public/Granted day:2012-08-23
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