公开(公告)号：US08315096B2

公开(公告)日：2012-11-20

申请号：US13216546

申请日：2011-08-24

Applicant: James D Allan ,  Jayant Ashokkumar

Inventor： James D Allan ,  Jayant Ashokkumar

IPC: G11C14/00

CPC classification number: G11C7/20 ,  G11C14/00 ,  G11C14/0063

Abstract: The state of a volatile memory cell is set by grounding a power supply to the volatile memory cell and driving a first bit line to the volatile memory cell to a first defined state. The first defined state of the first bit line is controllable independently of a defined state of a second bit line to the volatile memory cell. A word line of the volatile memory cell is driven to a word line state, and the power supply to the volatile memory cell is ungrounded.

Abstract translation: 通过将电源接地到易失性存储器单元并将第一位线驱动到易失性存储器单元至第一限定状态来设置易失性存储器单元的状态。 第一位线的第一定义状态可以独立于到易失性存储器单元的第二位线的定义状态来控制。 易失性存储器单元的字线被驱动到字线状态，并且向易失性存储单元的电源不接地。