Invention Grant
- Patent Title: Static random access memory with data controlled power supply
- Patent Title (中): 具有数据控制电源的静态随机存取存储器
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Application No.: US12985289Application Date: 2011-01-05
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Publication No.: US08320164B2Publication Date: 2012-11-27
- Inventor: Ching-Te Chuang , Hao-I Yang , Mao-Chih Hsia , Yung-Wei Lin , Chien-Yu Lu , Ming-Hsien Tu , Wei Hwang , Shyh-Jye Jou , Chia-Cheng Chen , Wei-Chiang Shih
- Applicant: Ching-Te Chuang , Hao-I Yang , Mao-Chih Hsia , Yung-Wei Lin , Chien-Yu Lu , Ming-Hsien Tu , Wei Hwang , Shyh-Jye Jou , Chia-Cheng Chen , Wei-Chiang Shih
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu TW Hsinchu
- Assignee: Faraday Technology Corp.,National Chiao Tung University
- Current Assignee: Faraday Technology Corp.,National Chiao Tung University
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu TW Hsinchu
- Agent Winston Hsu; Scott Margo
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A static random access memory with data controlled power supply, which comprises a memory cell circuit and at least one Write-assist circuit, for providing power to the memory cell circuit according to data to be written to the memory cell circuit.
Public/Granted literature
- US20120008377A1 STATIC RANDOM ACCESS MEMORY WITH DATA CONTROLLED POWER SUPPLY Public/Granted day:2012-01-12
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