发明授权
- 专利标题： High pressure bevel etch process
- 专利标题（中）： 高压斜面蚀刻工艺
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申请号： US13105674申请日： 2011-05-11
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公开(公告)号： US08323523B2公开(公告)日： 2012-12-04
- 发明人: Tong Fang , Yunsang S. Kim , Andreas Fischer
- 申请人： Tong Fang , Yunsang S. Kim , Andreas Fischer
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Beyer Law Group LLP
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.
公开/授权文献
- US20110275219A1 HIGH PRESSURE BEVEL ETCH PROCESS 公开/授权日：2011-11-10
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