公开(公告)号：US08323523B2

公开(公告)日：2012-12-04

申请号：US13105674

申请日：2011-05-11

申请人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

发明人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

IPC分类号： B44C1/22

CPC分类号： H01L21/02087 ,  H01J37/32366 ,  H01J37/32385 ,  H01L21/02021 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32138

摘要： A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.

摘要翻译： 提供了一种在半导体衬底支撑在半导体衬底支撑件上的斜面等离子体处理室中斜面加工半导体的方法。 该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 将工艺气体流入斜面等离子体处理室; 使所述工艺气体在所述半导体衬底的外围处于等离子体中; 并用等离子体对半导体衬底进行斜面加工。

公开(公告)号：US08262923B2

公开(公告)日：2012-09-11

申请号：US12635846

申请日：2009-12-11

申请人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

发明人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

IPC分类号： B44C1/22

CPC分类号： H01L21/3065 ,  H01J37/32366 ,  H01L21/02021

摘要： A method of preventing arcing during bevel edge etching a semiconductor substrate with a plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the plasma in the bevel etcher while evacuating the bevel etcher to a pressure of 3 to 100 Torr while maintaining RF voltage seen at the wafer at a low enough value to avoid arcing.

摘要翻译： 在半导体衬底支撑在半导体衬底支撑件上的斜面蚀刻器中用等离子体进行斜面边缘蚀刻半导体衬底时的防止电弧的方法包括在排除斜面蚀刻器的同时在斜面蚀刻器中等离子体刻蚀半导体衬底 压力为3至100托，同时保持晶片处的RF电压足够低以避免电弧。

公开(公告)号：US20110275219A1

公开(公告)日：2011-11-10

申请号：US13105674

申请日：2011-05-11

申请人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

发明人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

IPC分类号： H01L21/3065

CPC分类号： H01L21/02087 ,  H01J37/32366 ,  H01J37/32385 ,  H01L21/02021 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32138

摘要： A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.

摘要翻译： 提供了一种在半导体衬底支撑在半导体衬底支撑件上的斜面等离子体处理室中斜面加工半导体的方法。 该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 将工艺气体流入斜面等离子体处理室; 使所述工艺气体在所述半导体衬底的外围处于等离子体中; 并用等离子体对半导体衬底进行斜面加工。

公开(公告)号：US20100151686A1

公开(公告)日：2010-06-17

申请号：US12635846

申请日：2009-12-11

申请人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

发明人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32366 ,  H01L21/02021

摘要： A method of preventing arcing during bevel edge etching a semiconductor substrate with a plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the plasma in the bevel etcher while evacuating the bevel etcher to a pressure of 3 to 100 Torr while maintaining RF voltage seen at the wafer at a low enough value to avoid arcing.

摘要翻译： 在半导体衬底支撑在半导体衬底支撑件上的斜面蚀刻器中用等离子体进行斜面边缘蚀刻半导体衬底时的防止电弧的方法包括在排除斜面蚀刻器的同时在斜面蚀刻器中等离子体刻蚀半导体衬底 压力为3至100托，同时保持晶片处的RF电压足够低以避免电弧。

公开(公告)号：US09928995B2

公开(公告)日：2018-03-27

申请号：US12820020

申请日：2010-06-21

申请人： Andreas Fischer ,  Rajinder Dhindsa

发明人： Andreas Fischer ,  Rajinder Dhindsa

IPC分类号： B23P6/00 ,  H01J37/32

CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

公开(公告)号：US09174296B2

公开(公告)日：2015-11-03

申请号：US12908459

申请日：2010-10-20

申请人： Neil Martin Paul Benjamin ,  Andreas Fischer

发明人： Neil Martin Paul Benjamin ,  Andreas Fischer

IPC分类号： B23K9/00 ,  B23K10/00 ,  B23K9/013

CPC分类号： H01J37/32541 ,  B23K9/013 ,  B23K10/00 ,  B23K2101/40 ,  H01J37/3211

摘要： An apparatus for generating plasma including a plasma generating vessel and a coil having a coil length and a first set of partially enclosing, longitudinally oriented conductive (PELOC) fingers and a second set of PELOC fingers. The PELOC finger sets are oriented along a longitudinal axis of the vessel with each partially enclosing a periphery of the vessel. The two sets of PELOC fingers are oriented fingertips facing fingertips and separated by an inter-set distance that is less than the coil length.

摘要翻译： 一种用于产生等离子体的装置，包括等离子体发生容器和具有线圈长度的线圈和第一组部分封闭的纵向导电（PELOC）指状物和第二组PELOC指状物。 PELOC手指组沿着容器的纵向轴线定向，每个部分包围容器的周边。 两组PELOC手指是面向指尖的定向指尖，并且以小于线圈长度的间隔距离分开。

公开(公告)号：US08911590B2

公开(公告)日：2014-12-16

申请号：US11363703

申请日：2006-02-27

申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

公开(公告)号：US08747646B2

公开(公告)日：2014-06-10

申请号：US13375495

申请日：2010-06-01

申请人： Andreas Fischer ,  Itamar Michael Malkowsky ,  Florian Stecker ,  Siegfried R. Waldvogel ,  Axel Kirste

发明人： Andreas Fischer ,  Itamar Michael Malkowsky ,  Florian Stecker ,  Siegfried R. Waldvogel ,  Axel Kirste

IPC分类号： C25B3/10 ,  C25B3/00 ,  C25B3/02

CPC分类号： C25B3/10

摘要： The invention relates to a process for preparing biaryls by anodic cross-dehydrodimerization of substituted phenols with arenes in the presence of partially fluorinated and/or perfluorinated mediators and a supporting electrolyte.

摘要翻译： 本发明涉及通过在部分氟化和/或全氟化的介质和支持电解质的存在下用芳烃进行阳离子交叉脱氢二聚化来制备联芳基的方法。

公开(公告)号：US08642810B2

公开(公告)日：2014-02-04

申请号：US13383014

申请日：2010-07-07

申请人： Petr Kubanek ,  Alexander Panchenko ,  Andreas Fischer ,  Thomas Heidemann

发明人： Petr Kubanek ,  Alexander Panchenko ,  Andreas Fischer ,  Thomas Heidemann

IPC分类号： C07C209/02

CPC分类号： C07C209/02 ,  B01D2255/00 ,  B01D2256/16 ,  B01D2257/108 ,  C25B3/00 ,  Y02P20/582 ,  C07C211/46

摘要： Process for the direct amination of hydrocarbons to aminohydrocarbons by reaction of a feed stream E comprising at least one hydrocarbon and at least one aminating reagent to form a reaction mixture R comprising aminohydrocarbon and hydrogen in a reaction zone RZ and electrochemical separation of at least part of the hydrogen formed in the reaction from the reaction mixture R by means of a gastight membrane-electrode assembly having at least one selectively proton-conducting membrane and at least one electrode catalyst on each side of the membrane, where at least part of the hydrogen is oxidized to protons at the anode catalyst on the retentate side of the membrane and the protons pass through the membrane and on the permeate side are reacted with oxygen to form water, where the oxygen originates from an oxygen-comprising stream O which is brought into contact with the permeate side of the membrane, over the cathode catalyst.

摘要翻译： 通过包含至少一种烃和至少一种氨化试剂的进料流E的反应将碳氢化合物直接胺化成氨基烃的方法，以在反应区RZ中形成包含氨基烃和氢的反应混合物R，并且将至少部分 通过具有至少一个选择性质子传导膜和至少一个电极催化剂的气密膜电极组件在反应混合物R的反应中形成的氢，其中至少部分氢是 在阳极催化剂上在膜的滞留侧氧化成质子，并且质子通过膜并且在渗透侧与氧气反应以形成水，其中氧源自与氧接触的含氧物流O 与膜的渗透侧在阴极催化剂上。

公开(公告)号：US20140007413A1

公开(公告)日：2014-01-09

申请号：US14022111

申请日：2013-09-09

申请人： Eric Hudson ,  Andreas Fischer

发明人： Eric Hudson ,  Andreas Fischer

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： C23C16/00 ,  C23F1/00 ,  H01J37/32082 ,  H01J37/32623

摘要： A method for manufacturing a plasma processing system is provided. The method includes providing a movable plasma-facing structure configured to surround a plasma that is generated during processing of a substrate. The method also includes disposing a movable electrically conductive structure outside of the movable plasma-facing structure, wherein both structures configured to be deployed and retracted as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. During processing, the RF current from the plasmas flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing. The method further includes coupling a set of conductive straps to the movable electrically conductive structure. The set of conductive straps accommodates the movable electrically conductive structure when it is deployed and retracted while providing the RF current a low impedance path to ground.

摘要翻译： 提供了一种制造等离子体处理系统的方法。 该方法包括提供构造成围绕在衬底的处理期间产生的等离子体的可移动等离子体面向结构。 该方法还包括将可移动导电结构设置在可移动等离子体面向结构的外部，其中两个结构构造成作为单个单元展开和缩回以便于处理基板。 可移动导电结构是在等离子体处理期间接地的射频（RF）。 在处理期间，来自等离子体的RF电流在等离子体处理期间通过可移动等离子体面向结构流动到可移动导电结构。 该方法还包括将一组导电带耦合到可移动导电结构。 一组导电带在展开和缩回时容纳可移动的导电结构，同时为RF电流提供一个低阻抗地线路径。