Invention Grant
US08330245B2 Semiconductor wafers with reduced roll-off and bonded and unbonded SOI structures produced from same
有权
具有减少的滚降和粘结和未结合的SOI结构的半导体晶片由其制造
- Patent Title: Semiconductor wafers with reduced roll-off and bonded and unbonded SOI structures produced from same
- Patent Title (中): 具有减少的滚降和粘结和未结合的SOI结构的半导体晶片由其制造
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Application No.: US13021443Application Date: 2011-02-04
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Publication No.: US08330245B2Publication Date: 2012-12-11
- Inventor: John A. Pitney , Ichiro Yoshimura , Lu Fei
- Applicant: John A. Pitney , Ichiro Yoshimura , Lu Fei
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/32
Abstract:
The disclosure relates to preparation of silicon on insulator structures with reduced unbonded regions and to methods for producing such wafers by minimizing the roll-off amount (ROA) of the handle and donor wafers. Methods for polishing wafers are also provided.
Public/Granted literature
- US20110204471A1 SEMICONDUCTOR WAFERS WITH REDUCED ROLL-OFF AND BONDED AND UNBONDED SOI STRUCTURES PRODUCED FROM SAME Public/Granted day:2011-08-25
Information query
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