发明授权
- 专利标题： Memory device having improved programming operation
- 专利标题（中）： 存储器件具有改进的编程操作
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申请号： US13193192申请日： 2011-07-28
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公开(公告)号： US08331160B2公开(公告)日： 2012-12-11
- 发明人: Prashant S. Damle , Krishna Parat , Alessandro Torsi , Carlo Musilli , Kalpana Vakati , Akira Goda
- 申请人： Prashant S. Damle , Krishna Parat , Alessandro Torsi , Carlo Musilli , Kalpana Vakati , Akira Goda
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg & Woessner, P.A.
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
Some embodiments include methods and devices having a module and memory cells. The module is configured to reduce the amount of electrons in the sources and drains of the memory cells during a programming operation.
公开/授权文献
- US20110280085A1 MEMORY DEVICE HAVING IMPROVED PROGRAMMING OPERATION 公开/授权日：2011-11-17
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