发明授权
US08338273B2 Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates
有权
用于在非极性和半极性基底上生长III族氮化物材料的脉冲选择性区域横向外延
- 专利标题： Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates
- 专利标题（中）： 用于在非极性和半极性基底上生长III族氮化物材料的脉冲选择性区域横向外延
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申请号： US12515991申请日： 2007-12-17
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公开(公告)号： US08338273B2公开(公告)日： 2012-12-25
- 发明人: M. Asif Khan , Vinod Adivarahan
- 申请人： M. Asif Khan , Vinod Adivarahan
- 申请人地址： US SC Columbia
- 专利权人： University of South Carolina
- 当前专利权人： University of South Carolina
- 当前专利权人地址： US SC Columbia
- 代理机构： Dority & Manning, P.A.
- 国际申请： PCT/US2007/087751 WO 20071217
- 国际公布： WO2009/002365 WO 20081231
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a pulsed selective area lateral overgrowth of a group III nitride layer can be achieved on a non-polar and semi-polar base layer. By utilizing the novel P-MOCVD or PALE and lateral over growth over selected area, very high lateral growth conditions can be achieved at relatively lower growth temperature which does not affect the III-N surfaces.