发明授权
- 专利标题： TSV formation processes using TSV-last approach
- 专利标题（中）： 使用TSV最后一种方法的TSV形成过程
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申请号： US12834304申请日： 2010-07-12
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公开(公告)号： US08338939B2公开(公告)日： 2012-12-25
- 发明人: Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
- 申请人： Jing-Cheng Lin , Yung-Chi Lin , Ku-Feng Yang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A device includes a semiconductor substrate having a front surface and a back surface opposite the front surface. An insulation region extends from the front surface into the semiconductor substrate. An inter-layer dielectric (ILD) is over the insulation region. A landing pad extends from a top surface of the ILD into the insulation region. A through-substrate via (TSV) extends from the back surface of the semiconductor substrate to the landing pad.
公开/授权文献
- US20120007154A1 TSV Formation Processes Using TSV-Last Approach 公开/授权日：2012-01-12
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