发明授权
US08343812B2 Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same
失效
具有接合界面的基板中的接触结构，包括该接合界面的半导体器件，其制造方法
- 专利标题： Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same
- 专利标题（中）： 具有接合界面的基板中的接触结构，包括该接合界面的半导体器件，其制造方法
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申请号： US13204385申请日： 2011-08-05
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公开(公告)号： US08343812B2公开(公告)日： 2013-01-01
- 发明人: Min-Sung Song , Soon-Moon Jung , Han-Soo Kim , Young-Seop Rah , Won-Seok Cho , Yang-Soo Son , Jong-Hyuk Kim , Young-Chul Jang
- 申请人： Min-Sung Song , Soon-Moon Jung , Han-Soo Kim , Young-Seop Rah , Won-Seok Cho , Yang-Soo Son , Jong-Hyuk Kim , Young-Chul Jang
- 申请人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Consulting, PLLC
- 优先权： KR10-2008-0070716 20080721
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
On embodiment of a contact structure may include a lower insulation layer on a lower substrate, an upper substrate on the lower insulation layer, a groove penetrating the upper substrate to extend into the lower insulation layer, the groove below an interface between the upper substrate and the lower insulation layer, an upper insulation layer in the groove, and a contact plug penetrating the upper insulation layer in the groove to extend into the lower insulation layer.