发明授权
- 专利标题： Semiconductor device comprising oxide semiconductor layer
- 专利标题（中）： 包括氧化物半导体层的半导体器件
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申请号： US12898366申请日： 2010-10-05
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公开(公告)号： US08344374B2公开(公告)日： 2013-01-01
- 发明人: Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
- 申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2009-235792 20091009
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.
公开/授权文献
- US20110084268A1 SEMICONDUCTOR DEVICE 公开/授权日：2011-04-14
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