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公开(公告)号：US08816349B2
公开(公告)日：2014-08-26
申请号：US12898357
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
IPC分类号： H01L27/14
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译： 通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以 防止 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。
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公开(公告)号：US08344374B2
公开(公告)日：2013-01-01
申请号：US12898366
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
IPC分类号： H01L29/10
CPC分类号： H01L29/78669 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78678 , H01L29/7869
摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.
摘要翻译： 本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响 防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。 为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是 连接到具有抑制的杂质浓度的氧化物半导体层。 另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。
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公开(公告)号：US20110084268A1
公开(公告)日：2011-04-14
申请号：US12898366
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Yasuo Nakamura , Junpei Sugao , Hideki Uochi
CPC分类号： H01L29/78669 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78678 , H01L29/7869
摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.
摘要翻译： 本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响 防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。 为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是 连接到具有抑制的杂质浓度的氧化物半导体层。 另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。
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公开(公告)号：US20110084267A1
公开(公告)日：2011-04-14
申请号：US12898357
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译： 通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以 防止 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。
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公开(公告)号：US20110084337A1
公开(公告)日：2011-04-14
申请号：US12898345
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
发明人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
CPC分类号： H01L27/12 , H01L27/124
摘要： As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译： 对于以显示装置为代表的半导体装置，其目的在于提供一种高可靠性的可应用大尺寸或高清晰度屏幕的高可靠性半导体装置，其具有高显示质量并且稳定地工作。 通过使用包含Cu作为长引线的导电层，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的半导体层不重叠并且被包括氮化硅的绝缘层包围的方式设置，由此可以防止Cu的扩散 ; 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。
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公开(公告)号：US08253144B2
公开(公告)日：2012-08-28
申请号：US12898345
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
发明人： Shunpei Yamazaki , Jun Koyama , Hideki Uochi , Yasuo Nakamura , Junpei Sugao
IPC分类号： H01L27/14
CPC分类号： H01L27/12 , H01L27/124
摘要： As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译： 对于以显示装置为代表的半导体装置，其目的在于提供一种高可靠性的可应用大尺寸或高清晰度屏幕的高可靠性半导体装置，其具有高显示质量并且稳定地工作。 通过使用包含Cu作为长引线的导电层，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的半导体层不重叠并且被包括氮化硅的绝缘层包围的方式设置，由此可以防止Cu的扩散 ; 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。
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公开(公告)号：US07333077B2
公开(公告)日：2008-02-19
申请号：US10719031
申请日：2003-11-24
申请人： Jun Koyama , Yu Yamazaki , Yoshifumi Tanada , Satoshi Seo , Takeshi Nishi , Yasuo Nakamura , Shunpei Yamazaki
发明人： Jun Koyama , Yu Yamazaki , Yoshifumi Tanada , Satoshi Seo , Takeshi Nishi , Yasuo Nakamura , Shunpei Yamazaki
IPC分类号： G09G3/30
CPC分类号： H01L27/3267 , G09G3/32 , G09G2300/0443 , G09G2300/0809 , G09G2300/0842 , G09G2340/0492 , H01L2251/5323
摘要： A display device capable of displaying on both screens and switching between vertical and horizontal display, and a driving method thereof. Each pixel comprises a first region including a first light emitting element, and a second region including a second light emitting element. The first region has a bottom emission structure whereas the second region has a top emission structure. The display device comprises a source signal line driver circuit for driving the pixel, a first gate signal line driver circuit having a scan direction perpendicular to that of the source signal line driver circuit, and a second gate signal line driver circuit having a scan direction perpendicular to that of the first gate signal line driver circuit. In a normal display, the first gate signal line driver circuit performs perpendicular scanning, and when switching between vertical and horizontal display, the second gate signal line driver circuit performs perpendicular scanning.
摘要翻译： 一种能够在两个屏幕上显示并在垂直和水平显示之间切换的显示装置及其驱动方法。 每个像素包括包括第一发光元件的第一区域和包括第二发光元件的第二区域。 第一区域具有底部发射结构，而第二区域具有顶部发射结构。 显示装置包括用于驱动像素的源极信号线驱动电路，具有与源极信号线驱动电路的扫描方向垂直的扫描方向的第一栅极信号线驱动电路和具有扫描方向垂直的第二栅极信号线驱动电路 与第一栅极信号线驱动电路的电路。 在正常显示中，第一栅极信号线驱动电路执行垂直扫描，并且当在垂直和水平显示之间切换时，第二栅极信号线驱动电路执行垂直扫描。
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公开(公告)号：US07592984B2
公开(公告)日：2009-09-22
申请号：US11941318
申请日：2007-11-16
申请人： Jun Koyama , Yu Yamazaki , Yoshifumi Tanada , Satoshi Seo , Takeshi Nishi , Yasuo Nakamura , Shunpei Yamazaki
发明人： Jun Koyama , Yu Yamazaki , Yoshifumi Tanada , Satoshi Seo , Takeshi Nishi , Yasuo Nakamura , Shunpei Yamazaki
IPC分类号： G09G3/30
CPC分类号： H01L27/3267 , G09G3/32 , G09G2300/0443 , G09G2300/0809 , G09G2300/0842 , G09G2340/0492 , H01L2251/5323
摘要： A display device capable of displaying on both screens and switching between vertical and horizontal display, and a driving method thereof. Each pixel comprises a first region including a first light emitting element, and a second region including a second light emitting element. The first region has a bottom emission structure whereas the second region has a top emission structure. The display device comprises a source signal line driver circuit for driving the pixel, a first gate signal line driver circuit having a scan direction perpendicular to that of the source signal line driver circuit, and a second gate signal line driver circuit having a scan direction perpendicular to that of the first gate signal line driver circuit. In a normal display, the first gate signal line driver circuit performs perpendicular scanning, and when switching between vertical and horizontal display, the second gate signal line driver circuit performs perpendicular scanning.
摘要翻译： 一种能够在两个屏幕上显示并在垂直和水平显示之间切换的显示装置及其驱动方法。 每个像素包括包括第一发光元件的第一区域和包括第二发光元件的第二区域。 第一区域具有底部发射结构，而第二区域具有顶部发射结构。 显示装置包括用于驱动像素的源极信号线驱动电路，具有与源极信号线驱动电路的扫描方向垂直的扫描方向的第一栅极信号线驱动电路和具有扫描方向垂直的第二栅极信号线驱动电路 与第一栅极信号线驱动电路的电路。 在正常显示中，第一栅极信号线驱动电路执行垂直扫描，并且当在垂直和水平显示之间切换时，第二栅极信号线驱动电路执行垂直扫描。
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公开(公告)号：US20080090620A1
公开(公告)日：2008-04-17
申请号：US11941318
申请日：2007-11-16
申请人： Jun Koyama , Yu Yamazaki , Yoshifumi Tanada , Satoshi Seo , Takeshi Nishi , Yasuo Nakamura , Shunpei Yamazaki
发明人： Jun Koyama , Yu Yamazaki , Yoshifumi Tanada , Satoshi Seo , Takeshi Nishi , Yasuo Nakamura , Shunpei Yamazaki
CPC分类号： H01L27/3267 , G09G3/32 , G09G2300/0443 , G09G2300/0809 , G09G2300/0842 , G09G2340/0492 , H01L2251/5323
摘要： A display device capable of displaying on both screens and switching between vertical and horizontal display, and a driving method thereof. Each pixel comprises a first region including a first light emitting element, and a second region including a second light emitting element. The first region has a bottom emission structure whereas the second region has a top emission structure. The display device comprises a source signal line driver circuit for driving the pixel, a first gate signal line driver circuit having a scan direction perpendicular to that of the source signal line driver circuit, and a second gate signal line driver circuit having a scan direction perpendicular to that of the first gate signal line driver circuit. In a normal display, the first gate signal line driver circuit performs perpendicular scanning, and when switching between vertical and horizontal display, the second gate signal line driver circuit performs perpendicular scanning.
摘要翻译： 一种能够在两个屏幕上显示并在垂直和水平显示之间切换的显示装置及其驱动方法。 每个像素包括包括第一发光元件的第一区域和包括第二发光元件的第二区域。 第一区域具有底部发射结构，而第二区域具有顶部发射结构。 显示装置包括用于驱动像素的源极信号线驱动电路，具有与源极信号线驱动电路的扫描方向垂直的扫描方向的第一栅极信号线驱动电路和具有扫描方向垂直的第二栅极信号线驱动电路 与第一栅极信号线驱动电路的电路。 在正常显示中，第一栅极信号线驱动电路执行垂直扫描，并且当在垂直和水平显示之间切换时，第二栅极信号线驱动电路进行垂直扫描。
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公开(公告)号：US08609181B2
公开(公告)日：2013-12-17
申请号：US12507820
申请日：2009-07-23
申请人： Shunpei Yamazaki , Ritsuko Nagao , Yasuo Nakamura
发明人： Shunpei Yamazaki , Ritsuko Nagao , Yasuo Nakamura
IPC分类号： B05D5/06
CPC分类号： H01L27/3276 , G02F1/136204 , H01L27/3246 , H01L27/3248 , H01L51/5092 , H01L51/5203 , H01L51/5228 , H01L51/5234 , H01L2251/5315
摘要： It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film.
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