发明授权
- 专利标题： Method of bonding two substrates
- 专利标题（中）： 粘合两种基材的方法
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申请号： US12525493申请日： 2007-11-23
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公开(公告)号： US08349703B2公开(公告)日： 2013-01-08
- 发明人: Sébastien Kerdiles , Willy Michel , Walter Schwarzenbach , Daniel Delprat , Nadia Ben Mohamed
- 申请人： Sébastien Kerdiles , Willy Michel , Walter Schwarzenbach , Daniel Delprat , Nadia Ben Mohamed
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 代理机构： Winston & Strawn LLP
- 优先权： FR0753318 20070216
- 国际申请： PCT/EP2007/062750 WO 20071123
- 国际公布： WO2008/107029 WO 20080912
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/46
摘要：
The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
公开/授权文献
- US20100093152A1 METHOD OF BONDING TWO SUBSTRATES 公开/授权日：2010-04-15