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公开(公告)号：US08349703B2
公开(公告)日：2013-01-08
申请号：US12525493
申请日：2007-11-23
CPC分类号： H01L21/2007 , H01L21/02052
摘要： The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
摘要翻译： 本发明涉及一种形成结构的方法，该结构包括从施主衬底转移到第二衬底上的半导体材料的薄层，其中两种不同的原子种类在一定条件下共注入到施主衬底中，以便产生弱化区 限定待传输的薄层。 植入两种不同的原子物质，使得它们的峰在施主衬底中具有小于200的偏移，并且在粗糙化至少一个结合表面之后将衬底粘合在一起。
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公开(公告)号：US20100093152A1
公开(公告)日：2010-04-15
申请号：US12525493
申请日：2007-11-23
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/02052
摘要： The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
摘要翻译： 本发明涉及一种形成结构的方法，该结构包括从施主衬底转移到第二衬底上的半导体材料的薄层，其中两种不同的原子种类在一定条件下共注入到施主衬底中，以便产生弱化区 限定待传输的薄层。 植入两种不同的原子物质，使得它们的峰在施主衬底中具有小于200的偏移，并且在粗糙化至少一个结合表面之后将衬底粘合在一起。
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公开(公告)号：US07645682B2
公开(公告)日：2010-01-12
申请号：US11873311
申请日：2007-10-16
IPC分类号： H01L21/76 , H01L21/46 , H01L21/30 , H01L21/461
CPC分类号： H01L21/2007 , H01L21/02052
摘要： The invention relates to improvements in a method for molecularly bonding first and second substrates together by placing them in surface to surface contact. The improvement includes, prior to placing the substrates in contact, cleaning the surface of one or both of the substrates in a manner to provide a cleaned surface that is slightly roughened compared to a conventionally polished surface, and heating at least one or both of the substrates prior to placing the substrates in contact while retaining the heating at least until the substrates are in surface to surface contact.
摘要翻译： 本发明涉及通过将第一和第二基底与表面与表面接触放置而将第一和第二基底分子结合在一起的方法的改进。 改进之处在于，在将基板放置接触之前，以与常规研磨的表面相比较，以提供与粗糙表面稍微粗糙的清洁表面的方式清洁一个或两个基板的表面，并加热至少一个或两个 在将衬底置于接触状态之前，至少保持加热至基板处于表面与表面接触之前的基板。
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公开(公告)号：US20080200008A1
公开(公告)日：2008-08-21
申请号：US11873311
申请日：2007-10-16
CPC分类号： H01L21/2007 , H01L21/02052
摘要： The invention relates to improvements in a method for molecularly bonding first and second substrates together by placing them in surface to surface contact. The improvement includes, prior to placing the substrates in contact, cleaning the surface of one or both of the substrates in a manner to provide a cleaned surface that is slightly roughened compared to a conventionally polished surface, and heating at least one or both of the substrates prior to placing the substrates in contact while retaining the heating at least until the substrates are in surface to surface contact.
摘要翻译： 本发明涉及通过将第一和第二基底与表面与表面接触放置而将第一和第二基底分子结合在一起的方法的改进。 改进之处在于，在将基板放置接触之前，以与常规研磨的表面相比较，以提供与粗糙表面稍微粗糙的清洁表面的方式清洁一个或两个基板的表面，并加热至少一个或两个 在将衬底置于接触状态之前，至少保持加热至基板处于表面与表面接触之前的基板。
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5.发明授权公开(公告)号：US07749862B2
公开(公告)日：2010-07-06
申请号：US11624867
申请日：2007-01-19
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译： 描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。 该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面 以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域 无力，并从供体晶片上分离有用层。
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6.发明申请公开(公告)号：US20100105217A1
公开(公告)日：2010-04-29
申请号：US12529482
申请日：2008-03-18
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.
摘要翻译： 在位于两个基板之一的给定深度的脆化区处分离两个基板的方法。 该方法包括在炉中实现的分离退火步骤，其中退火包括第一阶段，在该阶段期间温度沿升级变化，允许达到高温并在该高温下进行退火以使其稳定，在第二阶段期间 温度沿着降级而变化，其末端打开炉子以从炉中卸载基板。 调节第二相以便在炉子打开时使温度不均匀性最小化，例如在基板的分离表面处的裂纹缺陷。
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7.发明申请公开(公告)号：US20050028727A1
公开(公告)日：2005-02-10
申请号：US10766207
申请日：2004-01-29
IPC分类号： H01L21/762 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/76254
摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
摘要翻译： 一种从晶片上分离层的方法。 在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。 在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。
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8.发明授权公开(公告)号：US08088671B2
公开(公告)日：2012-01-03
申请号：US12529482
申请日：2008-03-18
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.
摘要翻译： 在位于两个基板之一的给定深度的脆化区处分离两个基板的方法。 该方法包括在炉中实现的分离退火步骤，其中退火包括第一阶段，在该阶段期间温度沿升级变化，允许达到高温并在该高温下进行退火以使其稳定，在第二阶段期间 温度沿着降级而变化，其末端打开炉子以从炉中卸载基板。 调节第二相以便在炉子打开时使温度不均匀性最小化，例如在基板的分离表面处的裂纹缺陷。
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9.发明授权公开(公告)号：US07465645B2
公开(公告)日：2008-12-16
申请号：US10766207
申请日：2004-01-29
CPC分类号： H01L21/76254
摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
摘要翻译： 一种从晶片上分离层的方法。 在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。 在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。
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10.发明申请METHODS FOR MINIMIZING DEFECTS WHEN TRANSFERRING A SEMICONDUCTOR USEFUL LAYER 有权用于在传输半导体有用层时最小化缺陷的方法公开(公告)号：US20070117229A1
公开(公告)日：2007-05-24
申请号：US11624867
申请日：2007-01-19
IPC分类号： H01L21/66
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译： 描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。 该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面 以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域 无力，并从供体晶片上分离有用层。
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