发明授权
- 专利标题: Method for stacking semiconductor dies
- 专利标题(中): 半导体晶片堆叠方法
-
申请号: US13168351申请日: 2011-06-24
-
公开(公告)号: US08362593B2公开(公告)日: 2013-01-29
- 发明人: Ku-Feng Yang , Weng-Jin Wu , Wen-Chih Chiou , Chen-Hua Yu
- 申请人: Ku-Feng Yang , Weng-Jin Wu , Wen-Chih Chiou , Chen-Hua Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
A system and method for stacking semiconductor dies is disclosed. A preferred embodiment comprises forming through-silicon vias through the wafer, protecting a rim edge of the wafer, and then removing the unprotected portions so that the rim edge has a greater thickness than the thinned wafer. This thickness helps the fragile wafer survive further transport and process steps. The rim edge is then preferably removed during singulation of the individual dies from the wafer.
公开/授权文献
- US20110248409A1 Method for Stacking Semiconductor Dies 公开/授权日:2011-10-13